Porous structures in single-crystal silicon wafers can be formed by electrochemical etching. Porous silicon in a P+-type doped wafer consists of long tubular voids running perpendicular to the surface. The nanometer scale structural properties of such tubes are investigated by small-angle neutron scattering. The effect of annealing in air up to 550° C is examined in four samples of P+-type "tubular" porous silicon. Our measured data are compatible with a process of thermal desorption of hydrogen and other dissolution products from the porous tubes whose diameter vary in a wide transition layer between 10.1 and 23.5 nm.
- Nanoscale objects
- Small-angle neutron scattering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering