Small-angle neutron scattering in porous silicon

G. Kádár, G. Káli, Cs Dücsö, É B. Vázsonyi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Porous structures in single-crystal silicon wafers can be formed by electrochemical etching. Porous silicon in a P+-type doped wafer consists of long tubular voids running perpendicular to the surface. The nanometer scale structural properties of such tubes are investigated by small-angle neutron scattering. The effect of annealing in air up to 550° C is examined in four samples of P+-type "tubular" porous silicon. Our measured data are compatible with a process of thermal desorption of hydrogen and other dissolution products from the porous tubes whose diameter vary in a wide transition layer between 10.1 and 23.5 nm.

Original languageEnglish
Pages (from-to)1014-1015
Number of pages2
JournalPhysica B: Condensed Matter
Volume234-236
DOIs
Publication statusPublished - Jun 2 1997

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Keywords

  • Nanoscale objects
  • Porosity
  • Semiconductors
  • Small-angle neutron scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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