SI3N4 based non-volatile memory structures with embedded Si nano crystals

P. Basa, Zs J. Horváth, T. Jászi, A. E. Pap, G. Moinár, A. Kovalev, D. Wainstein, P. Turmezei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a SI3N 4 control layer and SiO2 or SI3N4 tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of ±15 V, 10 ms.

Original languageEnglish
Title of host publicationASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems
Pages63-66
Number of pages4
DOIs
Publication statusPublished - Dec 1 2008
Event7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice, Slovakia
Duration: Oct 12 2008Oct 16 2008

Publication series

NameASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems

Other

Other7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
CountrySlovakia
CitySmolenice
Period10/12/0810/16/08

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Basa, P., Horváth, Z. J., Jászi, T., Pap, A. E., Moinár, G., Kovalev, A., Wainstein, D., & Turmezei, P. (2008). SI3N4 based non-volatile memory structures with embedded Si nano crystals. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems (pp. 63-66). [4743359] (ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems). https://doi.org/10.1109/ASDAM.2008.4743359