SI3N4 based non-volatile memory structures with embedded Si nano crystals

P. Basa, Z. Horváth, T. Jászi, A. Pap, G. Moinár, A. Kovalev, D. Wainstein, P. Turmezei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a SI3N 4 control layer and SiO2 or SI3N4 tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of ±15 V, 10 ms.

Original languageEnglish
Title of host publicationASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems
Pages63-66
Number of pages4
DOIs
Publication statusPublished - 2008
Event7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice, Slovakia
Duration: Oct 12 2008Oct 16 2008

Other

Other7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
CountrySlovakia
CitySmolenice
Period10/12/0810/16/08

Fingerprint

Nanocrystals
Data storage equipment
Low pressure chemical vapor deposition
Crystals
Tunnels

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Basa, P., Horváth, Z., Jászi, T., Pap, A., Moinár, G., Kovalev, A., ... Turmezei, P. (2008). SI3N4 based non-volatile memory structures with embedded Si nano crystals. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems (pp. 63-66). [4743359] https://doi.org/10.1109/ASDAM.2008.4743359

SI3N4 based non-volatile memory structures with embedded Si nano crystals. / Basa, P.; Horváth, Z.; Jászi, T.; Pap, A.; Moinár, G.; Kovalev, A.; Wainstein, D.; Turmezei, P.

ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems. 2008. p. 63-66 4743359.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Basa, P, Horváth, Z, Jászi, T, Pap, A, Moinár, G, Kovalev, A, Wainstein, D & Turmezei, P 2008, SI3N4 based non-volatile memory structures with embedded Si nano crystals. in ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems., 4743359, pp. 63-66, 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, Slovakia, 10/12/08. https://doi.org/10.1109/ASDAM.2008.4743359
Basa P, Horváth Z, Jászi T, Pap A, Moinár G, Kovalev A et al. SI3N4 based non-volatile memory structures with embedded Si nano crystals. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems. 2008. p. 63-66. 4743359 https://doi.org/10.1109/ASDAM.2008.4743359
Basa, P. ; Horváth, Z. ; Jászi, T. ; Pap, A. ; Moinár, G. ; Kovalev, A. ; Wainstein, D. ; Turmezei, P. / SI3N4 based non-volatile memory structures with embedded Si nano crystals. ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems. 2008. pp. 63-66
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