Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals

Zsolt J. Horváth, Péter Basa, Támas Jászi, Andrea E. Pap, György Molnár, Anatoly Kovalev, Dmitry Wainstein, Péter Turmezei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Memory structures with an embedded sheet ofseparated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N 4 control and SiO2 tunnel layers. It was obtained that a properly located layer of Si or Ge nanocrystals can improve both the charging and rettntion behaviour ofthe MNOS structures simultaneously. Memory window width ofabout 6.6 V and retention time of 41 years has been achievedfor charging pulses of ±15 V, 10 m.s.

Original languageEnglish
Title of host publicationISSE 2009
Subtitle of host publication32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings
DOIs
Publication statusPublished - Nov 20 2009
EventISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Brno, Czech Republic
Duration: May 13 2009May 17 2009

Publication series

NameISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings

Other

OtherISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics
CountryCzech Republic
CityBrno
Period5/13/095/17/09

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ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Horváth, Z. J., Basa, P., Jászi, T., Pap, A. E., Molnár, G., Kovalev, A., Wainstein, D., & Turmezei, P. (2009). Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals. In ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings [5206962] (ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings). https://doi.org/10.1109/ISSE.2009.5206962