Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals

Z. Horváth, Péter Basa, Támas Jászi, A. Pap, G. Molnár, Anatoly Kovalev, Dmitry Wainstein, Péter Turmezei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Memory structures with an embedded sheet ofseparated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N 4 control and SiO2 tunnel layers. It was obtained that a properly located layer of Si or Ge nanocrystals can improve both the charging and rettntion behaviour ofthe MNOS structures simultaneously. Memory window width ofabout 6.6 V and retention time of 41 years has been achievedfor charging pulses of ±15 V, 10 m.s.

Original languageEnglish
Title of host publicationISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings
DOIs
Publication statusPublished - 2009
EventISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Brno, Czech Republic
Duration: May 13 2009May 17 2009

Other

OtherISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics
CountryCzech Republic
CityBrno
Period5/13/095/17/09

Fingerprint

Nanocrystals
Data storage equipment
Low pressure chemical vapor deposition
Tunnels
silicon nitride

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Horváth, Z., Basa, P., Jászi, T., Pap, A., Molnár, G., Kovalev, A., ... Turmezei, P. (2009). Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals. In ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings [5206962] https://doi.org/10.1109/ISSE.2009.5206962

Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals. / Horváth, Z.; Basa, Péter; Jászi, Támas; Pap, A.; Molnár, G.; Kovalev, Anatoly; Wainstein, Dmitry; Turmezei, Péter.

ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings. 2009. 5206962.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horváth, Z, Basa, P, Jászi, T, Pap, A, Molnár, G, Kovalev, A, Wainstein, D & Turmezei, P 2009, Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals. in ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings., 5206962, ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics, Brno, Czech Republic, 5/13/09. https://doi.org/10.1109/ISSE.2009.5206962
Horváth Z, Basa P, Jászi T, Pap A, Molnár G, Kovalev A et al. Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals. In ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings. 2009. 5206962 https://doi.org/10.1109/ISSE.2009.5206962
Horváth, Z. ; Basa, Péter ; Jászi, Támas ; Pap, A. ; Molnár, G. ; Kovalev, Anatoly ; Wainstein, Dmitry ; Turmezei, Péter. / Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals. ISSE 2009: 32nd International Spring Seminar on Electronics Technology: Hetero System Integration, the path to New Solutions in the Modern Electronics - Conference Proceedings. 2009.
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