Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

K. Amimer, A. Georgakilas, K. Tsagaraki, M. Androulidaki, D. Cengher, L. Tóth, B. Pécz, M. Calamiotou

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Single-crystal hexagonal and cubic GaN thin films have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy directly on vicinal (001) GaAs substrates, misoriented by 2° toward [100], without using an incident As beam during oxide desorption or the following stages of growth. Both the GaAs nitridation and GaN growth conditions were found to control the structure of the layers. Cubic layers could be grown only without nitridation and under stoichiometric N/Ga flux ratio conditions. N-rich conditions favored the growth of hexagonal layers, which exhibited significantly higher photoluminescence intensities compared to cubic ones. Hexagonal single crystalline GaN films were grown with (1012) planes and presented characteristic surface roughness striations along a 〈110〉 substrate direction. On the contrary, a stepped surface morphology was observed for cubic GaN.

Original languageEnglish
Pages (from-to)2580-2582
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number18
Publication statusPublished - May 1 2000

Fingerprint

molecular beam epitaxy
single crystals
nitrogen plasma
striation
radio frequencies
surface roughness
desorption
photoluminescence
oxides
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Amimer, K., Georgakilas, A., Tsagaraki, K., Androulidaki, M., Cengher, D., Tóth, L., ... Calamiotou, M. (2000). Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy. Applied Physics Letters, 76(18), 2580-2582.

Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy. / Amimer, K.; Georgakilas, A.; Tsagaraki, K.; Androulidaki, M.; Cengher, D.; Tóth, L.; Pécz, B.; Calamiotou, M.

In: Applied Physics Letters, Vol. 76, No. 18, 01.05.2000, p. 2580-2582.

Research output: Contribution to journalArticle

Amimer, K, Georgakilas, A, Tsagaraki, K, Androulidaki, M, Cengher, D, Tóth, L, Pécz, B & Calamiotou, M 2000, 'Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy', Applied Physics Letters, vol. 76, no. 18, pp. 2580-2582.
Amimer K, Georgakilas A, Tsagaraki K, Androulidaki M, Cengher D, Tóth L et al. Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy. Applied Physics Letters. 2000 May 1;76(18):2580-2582.
Amimer, K. ; Georgakilas, A. ; Tsagaraki, K. ; Androulidaki, M. ; Cengher, D. ; Tóth, L. ; Pécz, B. ; Calamiotou, M. / Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy. In: Applied Physics Letters. 2000 ; Vol. 76, No. 18. pp. 2580-2582.
@article{9becc3e7c66c482e88ede7a60839eafc,
title = "Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy",
abstract = "Single-crystal hexagonal and cubic GaN thin films have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy directly on vicinal (001) GaAs substrates, misoriented by 2° toward [100], without using an incident As beam during oxide desorption or the following stages of growth. Both the GaAs nitridation and GaN growth conditions were found to control the structure of the layers. Cubic layers could be grown only without nitridation and under stoichiometric N/Ga flux ratio conditions. N-rich conditions favored the growth of hexagonal layers, which exhibited significantly higher photoluminescence intensities compared to cubic ones. Hexagonal single crystalline GaN films were grown with (1012) planes and presented characteristic surface roughness striations along a 〈110〉 substrate direction. On the contrary, a stepped surface morphology was observed for cubic GaN.",
author = "K. Amimer and A. Georgakilas and K. Tsagaraki and M. Androulidaki and D. Cengher and L. T{\'o}th and B. P{\'e}cz and M. Calamiotou",
year = "2000",
month = "5",
day = "1",
language = "English",
volume = "76",
pages = "2580--2582",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy

AU - Amimer, K.

AU - Georgakilas, A.

AU - Tsagaraki, K.

AU - Androulidaki, M.

AU - Cengher, D.

AU - Tóth, L.

AU - Pécz, B.

AU - Calamiotou, M.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Single-crystal hexagonal and cubic GaN thin films have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy directly on vicinal (001) GaAs substrates, misoriented by 2° toward [100], without using an incident As beam during oxide desorption or the following stages of growth. Both the GaAs nitridation and GaN growth conditions were found to control the structure of the layers. Cubic layers could be grown only without nitridation and under stoichiometric N/Ga flux ratio conditions. N-rich conditions favored the growth of hexagonal layers, which exhibited significantly higher photoluminescence intensities compared to cubic ones. Hexagonal single crystalline GaN films were grown with (1012) planes and presented characteristic surface roughness striations along a 〈110〉 substrate direction. On the contrary, a stepped surface morphology was observed for cubic GaN.

AB - Single-crystal hexagonal and cubic GaN thin films have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy directly on vicinal (001) GaAs substrates, misoriented by 2° toward [100], without using an incident As beam during oxide desorption or the following stages of growth. Both the GaAs nitridation and GaN growth conditions were found to control the structure of the layers. Cubic layers could be grown only without nitridation and under stoichiometric N/Ga flux ratio conditions. N-rich conditions favored the growth of hexagonal layers, which exhibited significantly higher photoluminescence intensities compared to cubic ones. Hexagonal single crystalline GaN films were grown with (1012) planes and presented characteristic surface roughness striations along a 〈110〉 substrate direction. On the contrary, a stepped surface morphology was observed for cubic GaN.

UR - http://www.scopus.com/inward/record.url?scp=0000259471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000259471&partnerID=8YFLogxK

M3 - Article

VL - 76

SP - 2580

EP - 2582

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -