Single-and double energy N+ ion irradiated planar optical waveguides in Er

Tungsten-tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths

I. Bányász, Z. Zolnai, M. Fried, T. Lohner, S. Berneschi, G. C. Righini, S. Pelli, G. Nunzi-Conti

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er3+-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 lm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N+ ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N+ ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 lm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.

Original languageEnglish
Pages (from-to)299-304
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume307
DOIs
Publication statusPublished - 2013

Fingerprint

Planar waveguides
tungsten oxides
Optical waveguides
Bismuth
optical waveguides
bismuth
Telecommunication
Tungsten
telecommunication
Waveguides
Ion implantation
waveguides
Glass
Wavelength
Crystals
Oxides
glass
Ions
implantation
wavelengths

Keywords

  • Er-doped tungsten-tellurite glass
  • Ion implantation
  • M-line spectroscopy
  • Planar optical waveguides
  • Sillenite type BGO
  • Spectroscopic ellipsometry
  • Two-energy irradiation

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

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title = "Single-and double energy N+ ion irradiated planar optical waveguides in Er: Tungsten-tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths",
abstract = "Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er3+-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 lm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N+ ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N+ ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 lm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.",
keywords = "Er-doped tungsten-tellurite glass, Ion implantation, M-line spectroscopy, Planar optical waveguides, Sillenite type BGO, Spectroscopic ellipsometry, Two-energy irradiation",
author = "I. B{\'a}ny{\'a}sz and Z. Zolnai and M. Fried and T. Lohner and S. Berneschi and Righini, {G. C.} and S. Pelli and G. Nunzi-Conti",
year = "2013",
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TY - JOUR

T1 - Single-and double energy N+ ion irradiated planar optical waveguides in Er

T2 - Tungsten-tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths

AU - Bányász, I.

AU - Zolnai, Z.

AU - Fried, M.

AU - Lohner, T.

AU - Berneschi, S.

AU - Righini, G. C.

AU - Pelli, S.

AU - Nunzi-Conti, G.

PY - 2013

Y1 - 2013

N2 - Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er3+-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 lm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N+ ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N+ ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 lm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.

AB - Ion implantation proved to be a universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er3+-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 lm, as they exhibit large stimulated cross sections and broad emission bandwidth. Fabrication of channel waveguides in such a material via N+ ion implantation was reported recently. Sillenite type Bismuth Germanate (BGO) crystals are good nonlinear optical materials. Parameters of waveguide fabrication in both materials via implantation of MeV-energy N+ ions were optimized. First single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 lm was observed in both materials. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.1 MeV were performed to suppress leaky modes by increasing barrier width. Improvement of waveguide characteristics was found by m-line spectroscopy and spectroscopic ellipsometry.

KW - Er-doped tungsten-tellurite glass

KW - Ion implantation

KW - M-line spectroscopy

KW - Planar optical waveguides

KW - Sillenite type BGO

KW - Spectroscopic ellipsometry

KW - Two-energy irradiation

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