Simultaneous investigation of the crystal structure and electrical properties of crystallized germanium films by UHV in situ electron microscopy

A. Barna, P. Barna, Z. Bodó, J. F. Pócza, I. Pozsgai, G. Radnóczi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Three types of crystallization have been observed, depending on the gaseous contamination of the a-Ge films. A correlation between the crystallized structures and the corresponding electrical properties was found. In order to explain the measured Hall mobility of the crystalline Ge films, a model has been constructed in which the potential barrier of the grain boundaries is taken into account.

Original languageEnglish
Pages (from-to)49-62
Number of pages14
JournalThin Solid Films
Volume23
Issue number1
DOIs
Publication statusPublished - 1974

Fingerprint

Germanium
Electron microscopy
germanium
electron microscopy
Electric properties
Crystal structure
electrical properties
Hall mobility
crystal structure
Crystallization
Grain boundaries
contamination
Contamination
grain boundaries
crystallization
Crystalline materials

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Simultaneous investigation of the crystal structure and electrical properties of crystallized germanium films by UHV in situ electron microscopy. / Barna, A.; Barna, P.; Bodó, Z.; Pócza, J. F.; Pozsgai, I.; Radnóczi, G.

In: Thin Solid Films, Vol. 23, No. 1, 1974, p. 49-62.

Research output: Contribution to journalArticle

@article{054ed0e9f7e443f1bf524c85ea20d54b,
title = "Simultaneous investigation of the crystal structure and electrical properties of crystallized germanium films by UHV in situ electron microscopy",
abstract = "Three types of crystallization have been observed, depending on the gaseous contamination of the a-Ge films. A correlation between the crystallized structures and the corresponding electrical properties was found. In order to explain the measured Hall mobility of the crystalline Ge films, a model has been constructed in which the potential barrier of the grain boundaries is taken into account.",
author = "A. Barna and P. Barna and Z. Bod{\'o} and P{\'o}cza, {J. F.} and I. Pozsgai and G. Radn{\'o}czi",
year = "1974",
doi = "10.1016/0040-6090(74)90216-8",
language = "English",
volume = "23",
pages = "49--62",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Simultaneous investigation of the crystal structure and electrical properties of crystallized germanium films by UHV in situ electron microscopy

AU - Barna, A.

AU - Barna, P.

AU - Bodó, Z.

AU - Pócza, J. F.

AU - Pozsgai, I.

AU - Radnóczi, G.

PY - 1974

Y1 - 1974

N2 - Three types of crystallization have been observed, depending on the gaseous contamination of the a-Ge films. A correlation between the crystallized structures and the corresponding electrical properties was found. In order to explain the measured Hall mobility of the crystalline Ge films, a model has been constructed in which the potential barrier of the grain boundaries is taken into account.

AB - Three types of crystallization have been observed, depending on the gaseous contamination of the a-Ge films. A correlation between the crystallized structures and the corresponding electrical properties was found. In order to explain the measured Hall mobility of the crystalline Ge films, a model has been constructed in which the potential barrier of the grain boundaries is taken into account.

UR - http://www.scopus.com/inward/record.url?scp=49549156533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49549156533&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(74)90216-8

DO - 10.1016/0040-6090(74)90216-8

M3 - Article

VL - 23

SP - 49

EP - 62

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -