Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge

F. Nemouchi, D. Mangelinck, C. Bergman, G. Clugnet, P. Gas, J. Lábár

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

The reaction between nanometric Ni films and Ge is analyzed using isothermal x-ray diffraction measurements and transmission electron microscopy. It is found that NiGe is formed during deposition at room temperature. The metal rich phase that grows during heat treatment has been clearly identified to be Ni5Ge3. The simultaneous growths of Ni5Ge 3 and NiGe have been observed on amorphous and polycrystalline germanium. This is in contrast with the usual sequential growth reported in thin films.

Original languageEnglish
Article number131920
JournalApplied Physics Letters
Volume89
Issue number13
DOIs
Publication statusPublished - 2006

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germanium
x ray diffraction
heat treatment
transmission electron microscopy
room temperature
thin films
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nemouchi, F., Mangelinck, D., Bergman, C., Clugnet, G., Gas, P., & Lábár, J. (2006). Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge. Applied Physics Letters, 89(13), [131920]. https://doi.org/10.1063/1.2358189

Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge. / Nemouchi, F.; Mangelinck, D.; Bergman, C.; Clugnet, G.; Gas, P.; Lábár, J.

In: Applied Physics Letters, Vol. 89, No. 13, 131920, 2006.

Research output: Contribution to journalArticle

Nemouchi, F, Mangelinck, D, Bergman, C, Clugnet, G, Gas, P & Lábár, J 2006, 'Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge', Applied Physics Letters, vol. 89, no. 13, 131920. https://doi.org/10.1063/1.2358189
Nemouchi, F. ; Mangelinck, D. ; Bergman, C. ; Clugnet, G. ; Gas, P. ; Lábár, J. / Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge. In: Applied Physics Letters. 2006 ; Vol. 89, No. 13.
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