Simulation of MNOS memory hysteresis - Effect of layer thicknesses

K. Z. Molnár, Z. Horváth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

MNOS memory hysteresis curves are simulated by integrating the difference of the current via the oxide and nitride layer. The effect of the oxide and nitride thickness as well as the depth of charge centeroid is studied. The results indicate that the optimal oxide thickness is about 2 nm. A thin nitride layer decreases the efficiency of the injected charge. It has been obtained that the possible highest memory window width decreases monotonically with increasing depth of charge centroid.

Original languageEnglish
Title of host publicationSACI 2012 - 7th IEEE International Symposium on Applied Computational Intelligence and Informatics, Proceedings
Pages365-369
Number of pages5
Publication statusPublished - 2012
Event7th IEEE International Symposium on Applied Computational Intelligence and Informatics, SACI 2012 - Timisoara
Duration: May 24 2012May 26 2012

Other

Other7th IEEE International Symposium on Applied Computational Intelligence and Informatics, SACI 2012
CityTimisoara
Period5/24/125/26/12

Fingerprint

Nitrides
Hysteresis
Data storage equipment
Oxides

ASJC Scopus subject areas

  • Artificial Intelligence
  • Information Systems

Cite this

Molnár, K. Z., & Horváth, Z. (2012). Simulation of MNOS memory hysteresis - Effect of layer thicknesses. In SACI 2012 - 7th IEEE International Symposium on Applied Computational Intelligence and Informatics, Proceedings (pp. 365-369)

Simulation of MNOS memory hysteresis - Effect of layer thicknesses. / Molnár, K. Z.; Horváth, Z.

SACI 2012 - 7th IEEE International Symposium on Applied Computational Intelligence and Informatics, Proceedings. 2012. p. 365-369.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molnár, KZ & Horváth, Z 2012, Simulation of MNOS memory hysteresis - Effect of layer thicknesses. in SACI 2012 - 7th IEEE International Symposium on Applied Computational Intelligence and Informatics, Proceedings. pp. 365-369, 7th IEEE International Symposium on Applied Computational Intelligence and Informatics, SACI 2012, Timisoara, 5/24/12.
Molnár KZ, Horváth Z. Simulation of MNOS memory hysteresis - Effect of layer thicknesses. In SACI 2012 - 7th IEEE International Symposium on Applied Computational Intelligence and Informatics, Proceedings. 2012. p. 365-369
Molnár, K. Z. ; Horváth, Z. / Simulation of MNOS memory hysteresis - Effect of layer thicknesses. SACI 2012 - 7th IEEE International Symposium on Applied Computational Intelligence and Informatics, Proceedings. 2012. pp. 365-369
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