Simulation of memory behaviour of a non-volatile Si 3N 4 structure containing Si nanocrystals

Zs J. Horváth, V. A. Hardy

Research output: Contribution to journalArticle

10 Citations (Scopus)


Memory hysteresis, memory window and charge retention behaviour of an Al/Si 3N 4/Si structure with Si nanocrystals embedded in the Si 3N 4 layer are studied by fitting the results of a computer simulation to the experimental ones using simple analytical expressions. It is concluded that the current through the control nitride layer during a charging voltage pulse is higher than the steady-state current. At high voltage pulses other effects, as transients, additional current mechanisms or charge injection and trapping from the metal side, has to be considered. It is also obtained that the retention behaviour of the structure were determined by the Fowler-Nordheim tunneling.

Original languageEnglish
Pages (from-to)834-840
Number of pages7
JournalJournal of Nanoscience and Nanotechnology
Issue number2
Publication statusPublished - Feb 1 2008


  • MNOS
  • Non-volatile memories
  • Si nanocrystals
  • Silicon nitride
  • Simulation

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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