Simulation of charging properties of MNOS structures with embedded semiconductor nanocrystals

K. Z. Molnar, Z. Horváth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of the oxide thickness and the depth, size and location of semiconductor nanocrystals are studied on the charging behaviour of MNOS non-volatile memory structures by the calculation of electron and hole tunneling probability to the nanocrystals or to the nitride conduction or valence band, respectively, and by the simulation of memory hysteresis behaviour. It is concluded for both MNOS structures that the optimal for charging behaviour tunnel oxide thickness is about 2 nm The presence of nanocrystals enhances the charge injection resulting in better performance, but for structures with thin tunnel oxide layer (below 3 nm) only, and if the nanocrystals are located close to the oxide/nitride interface. But in the case of very high tunneling probability, i.e., of high tunneling currents the system approaches eqilibrium and the memory behaviour collapses.

Original languageEnglish
Title of host publicationCINTI 2012 - 13th IEEE International Symposium on Computational Intelligence and Informatics, Proceedings
Pages187-190
Number of pages4
DOIs
Publication statusPublished - 2012
Event13th IEEE International Symposium on Computational Intelligence and Informatics, CINTI 2012 - Budapest, Hungary
Duration: Nov 20 2012Nov 22 2012

Other

Other13th IEEE International Symposium on Computational Intelligence and Informatics, CINTI 2012
CountryHungary
CityBudapest
Period11/20/1211/22/12

Fingerprint

Nanocrystals
Semiconductor materials
Oxides
Data storage equipment
Nitrides
Tunnels
Charge injection
Electron tunneling
Valence bands
Conduction bands
Hysteresis
Electrons

ASJC Scopus subject areas

  • Artificial Intelligence
  • Computational Theory and Mathematics
  • Information Systems

Cite this

Molnar, K. Z., & Horváth, Z. (2012). Simulation of charging properties of MNOS structures with embedded semiconductor nanocrystals. In CINTI 2012 - 13th IEEE International Symposium on Computational Intelligence and Informatics, Proceedings (pp. 187-190). [6496757] https://doi.org/10.1109/CINTI.2012.6496757

Simulation of charging properties of MNOS structures with embedded semiconductor nanocrystals. / Molnar, K. Z.; Horváth, Z.

CINTI 2012 - 13th IEEE International Symposium on Computational Intelligence and Informatics, Proceedings. 2012. p. 187-190 6496757.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molnar, KZ & Horváth, Z 2012, Simulation of charging properties of MNOS structures with embedded semiconductor nanocrystals. in CINTI 2012 - 13th IEEE International Symposium on Computational Intelligence and Informatics, Proceedings., 6496757, pp. 187-190, 13th IEEE International Symposium on Computational Intelligence and Informatics, CINTI 2012, Budapest, Hungary, 11/20/12. https://doi.org/10.1109/CINTI.2012.6496757
Molnar KZ, Horváth Z. Simulation of charging properties of MNOS structures with embedded semiconductor nanocrystals. In CINTI 2012 - 13th IEEE International Symposium on Computational Intelligence and Informatics, Proceedings. 2012. p. 187-190. 6496757 https://doi.org/10.1109/CINTI.2012.6496757
Molnar, K. Z. ; Horváth, Z. / Simulation of charging properties of MNOS structures with embedded semiconductor nanocrystals. CINTI 2012 - 13th IEEE International Symposium on Computational Intelligence and Informatics, Proceedings. 2012. pp. 187-190
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