SIMS depth profiling for the characterization of Si-SiO2 structures

I. Bársony, J. Giber

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Abstract

The SIMS method was applied to compositional analysis of the Si-SiO2 transition region. Based on the curves of ion intensity versus sputtering time of 29Si+, 28Si-, 44SiO+ and 60SiO-2 and with a minimal correction of the resulting data, an upper limit for the transition region width could be determined. A semi-quantitative sodium atom distribution was obtained with the use of SIMS depth profiling via reactive sputtering, and the average sodium atom concentration values of the same sample were detected by means of activation analysis. The mobile charge studies of the same sample indicated an amount by more than an order of magnitude smaller than the sodium atom concentration maximum near the interface.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalApplications of Surface Science
Volume4
Issue number1
DOIs
Publication statusPublished - Jan 1980

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ASJC Scopus subject areas

  • Engineering(all)

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