Silicon vacancy related TV2a center in 4H-SiC

N. T. Son, Z. Zolnai, E. Janzén

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Electron paramagnetic resonance (EPR) was used to study the T V2a center in 4H-SiC, which was previously attributed to the isolated Si vacancy but with different charge states: neutral, single negative, and triple negative, corresponding to different spin states S = 1, S = 3/2, and S = 1/2, respectively. The TV2a. EPR spectra observed in dark and under light illumination in as-grown high-purity semi-insulating 4H-SiC in the absence of the negatively charged Si vacancy (VSi-) provide direct evidence confirming the spin triplet (S= 1) ground state of the center. A model with a triplet ground state and a singlet excited state is proposed to explain previously obtained results. The TV2a center can be detected in as-grown material annealed at 1600 °C.

Original languageEnglish
Article number205211
Pages (from-to)2052111-2052115
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number20
Publication statusPublished - Nov 2003

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Silicon
Ground state
Vacancies
Paramagnetic resonance
electron paramagnetic resonance
silicon
Excited states
ground state
Lighting
purity
illumination
excitation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Silicon vacancy related TV2a center in 4H-SiC. / Son, N. T.; Zolnai, Z.; Janzén, E.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 68, No. 20, 205211, 11.2003, p. 2052111-2052115.

Research output: Contribution to journalArticle

Son, NT, Zolnai, Z & Janzén, E 2003, 'Silicon vacancy related TV2a center in 4H-SiC', Physical Review B - Condensed Matter and Materials Physics, vol. 68, no. 20, 205211, pp. 2052111-2052115.
Son, N. T. ; Zolnai, Z. ; Janzén, E. / Silicon vacancy related TV2a center in 4H-SiC. In: Physical Review B - Condensed Matter and Materials Physics. 2003 ; Vol. 68, No. 20. pp. 2052111-2052115.
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