Silicon surface preparation and passivation by vapor phase of heavy water

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.

Original languageEnglish
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages181-184
Number of pages4
Volume145-146
ISBN (Print)3908451647, 9783908451648
DOIs
Publication statusPublished - 2009
Event9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 - Bruges, Belgium
Duration: Sep 22 2008Sep 24 2008

Publication series

NameSolid State Phenomena
Volume145-146
ISSN (Print)10120394

Other

Other9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
CountryBelgium
CityBruges
Period9/22/089/24/08

Fingerprint

Deuterium Oxide
Heavy water
heavy water
Silicon
Passivation
passivity
Vapors
vapor phases
Dangling bonds
preparation
Hydrogen
silicon
Adsorbates
hydrogen
Desorption
desorption
Noble Gases
Atoms
Interface states
dihydrides

Keywords

  • Deuterium passivation
  • Gas phase
  • Heavy water
  • Si native oxid
  • Wet chemical cleaning

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Pap, A., Nényei, Z., Battistig, G., & Bársony, I. (2009). Silicon surface preparation and passivation by vapor phase of heavy water. In Solid State Phenomena (Vol. 145-146, pp. 181-184). (Solid State Phenomena; Vol. 145-146). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.145-146.181

Silicon surface preparation and passivation by vapor phase of heavy water. / Pap, A.; Nényei, Zsolt; Battistig, G.; Bársony, I.

Solid State Phenomena. Vol. 145-146 Trans Tech Publications Ltd, 2009. p. 181-184 (Solid State Phenomena; Vol. 145-146).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pap, A, Nényei, Z, Battistig, G & Bársony, I 2009, Silicon surface preparation and passivation by vapor phase of heavy water. in Solid State Phenomena. vol. 145-146, Solid State Phenomena, vol. 145-146, Trans Tech Publications Ltd, pp. 181-184, 9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008, Bruges, Belgium, 9/22/08. https://doi.org/10.4028/www.scientific.net/SSP.145-146.181
Pap A, Nényei Z, Battistig G, Bársony I. Silicon surface preparation and passivation by vapor phase of heavy water. In Solid State Phenomena. Vol. 145-146. Trans Tech Publications Ltd. 2009. p. 181-184. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.145-146.181
Pap, A. ; Nényei, Zsolt ; Battistig, G. ; Bársony, I. / Silicon surface preparation and passivation by vapor phase of heavy water. Solid State Phenomena. Vol. 145-146 Trans Tech Publications Ltd, 2009. pp. 181-184 (Solid State Phenomena).
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