Silicon surface passivation by static charge

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A properly passivated silicon surface is chemically stable, and all interface properties are constant. The silicon dioxide layers fulfil the chemical stability requirements; however, their surface and interface charges have effect on the silicon surface potential barrier. Positive charge is usually assumed at the oxide-silicon interface, thus depletion or inversion layer develops in the case of p and accumulation in the case of n-type silicon. The surface of silicon dioxide can be charged macroscopically by corona charger or by conductive rubber stamp, microscopically by a tip of some scanning probe microscope (STM or AFM). The oxide surface usually retains the charges for a long time, however in the case of ultra-thin or other leaky oxide continuous charging it is necessary to keep the constant surface potential. The main purpose of this work is to summarize the possibilities of charging up the surface, the effect of the surface and interface charge on the surface properties of the silicon. The rearrangement of the surface charges will also be discussed.

Original languageEnglish
Pages (from-to)7691-7699
Number of pages9
JournalApplied Surface Science
Volume252
Issue number21
DOIs
Publication statusPublished - Aug 31 2006

Fingerprint

Silicon
Passivation
passivity
silicon
Surface potential
Silicon Dioxide
Oxides
Silica
Inversion layers
charging
Chemical stability
Rubber
Silicon oxides
Surface charge
silicon dioxide
Surface properties
Microscopes
oxides
Scanning
silicon oxides

Keywords

  • Charge PCD
  • Native oxide
  • Passivation
  • Silicon surface
  • SPV
  • Surface charge
  • Surface voltage
  • Tunnel current
  • Vibrating capacitor

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Silicon surface passivation by static charge. / Mizsei, J.

In: Applied Surface Science, Vol. 252, No. 21, 31.08.2006, p. 7691-7699.

Research output: Contribution to journalArticle

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