Silicon optical nanocrystal memory

R. J. Walters, P. G. Kik, J. D. Casperson, H. A. Atwater, R. Lindstedt, M. Giorgi, G. Bourianoff

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Abstract

The luminescence emission characteristics of silicon optical nanocrystal memory device were described. A silicon optical nanocrystal memory device can be fabricated through ion implantation, which can be read and erased optical or electrically. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity, which varies according to the average charge state of the nanocrystals embedded in the device. The device can also be programmed and erased electrically through charge injection and optically through internal photoemission.

Original languageEnglish
Pages (from-to)2622-2624
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number13
DOIs
Publication statusPublished - Sep 27 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Walters, R. J., Kik, P. G., Casperson, J. D., Atwater, H. A., Lindstedt, R., Giorgi, M., & Bourianoff, G. (2004). Silicon optical nanocrystal memory. Applied Physics Letters, 85(13), 2622-2624. https://doi.org/10.1063/1.1795364