Silicon nitride based non-volatile memory structures with embedded si or ge nanocrystals

Z. Horváth, P. Basa, T. Jaszi, A. Pap, G. Molnár, A. I. Kovalev, D. L. Wainstein, T. Gerlai, P. Turmezei

Research output: Contribution to journalArticle

Abstract

Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si 3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of semiconductor nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of above 6 V and retention time of 272 years was achieved for charging pulses of 15 ± V, 10 ms.

Original languageEnglish
Pages (from-to)19-22
Number of pages4
JournalKomunikacie
Volume12
Issue number2
Publication statusPublished - 2010

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Silicon nitride
Nanocrystals
Data storage equipment
Low pressure chemical vapor deposition
Tunnels
Semiconductor materials
Semiconductors
time

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Silicon nitride based non-volatile memory structures with embedded si or ge nanocrystals. / Horváth, Z.; Basa, P.; Jaszi, T.; Pap, A.; Molnár, G.; Kovalev, A. I.; Wainstein, D. L.; Gerlai, T.; Turmezei, P.

In: Komunikacie, Vol. 12, No. 2, 2010, p. 19-22.

Research output: Contribution to journalArticle

Horváth, Z, Basa, P, Jaszi, T, Pap, A, Molnár, G, Kovalev, AI, Wainstein, DL, Gerlai, T & Turmezei, P 2010, 'Silicon nitride based non-volatile memory structures with embedded si or ge nanocrystals', Komunikacie, vol. 12, no. 2, pp. 19-22.
Horváth, Z. ; Basa, P. ; Jaszi, T. ; Pap, A. ; Molnár, G. ; Kovalev, A. I. ; Wainstein, D. L. ; Gerlai, T. ; Turmezei, P. / Silicon nitride based non-volatile memory structures with embedded si or ge nanocrystals. In: Komunikacie. 2010 ; Vol. 12, No. 2. pp. 19-22.
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