Silicon direct bonding (SDB) - a substrate material for electronic devices

R. Wiget, B. Pécz, E. P. Burte

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A silicon direct bonding process was developed using a special chamber for cleaning, contacting and prebonding wafers up to 100 mm. After prebonding the wafers at 200 °C, annealing was carried out at temperatures ranging from 600 °C to 1180 °C for times between 30 minutes and 20 hours. Bare silicon and oxidized wafers were bonded. The electrical specification was done by evaluating the I-V characteristics with respect to breakdown, reverse current, ideality factor, series and parallel resistance (RS, RP). A strong dependence of RS and RP on bonding temperature and time was observed. In order to proof the viability of the bonded substrate for power devices, we fabricated p-i-n diodes. The diodes exhibit breakdown voltages up to 1400 V and forward current densities of 2 A/mm2. These p-i-n diodes were superior to diodes fabricated simultaneously on epitaxial material.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Power Electronics and Drive Systems
PublisherIEEE
Pages75-81
Number of pages7
Volume1
Publication statusPublished - 1995
EventProceedings of the 1995 International Conference on Power Electronics and Drive Systems. Part 2 (of 2) - Singapore, Singapore
Duration: Feb 21 1995Feb 24 1995

Other

OtherProceedings of the 1995 International Conference on Power Electronics and Drive Systems. Part 2 (of 2)
CitySingapore, Singapore
Period2/21/952/24/95

Fingerprint

Diodes
Silicon
Substrates
Electric breakdown
Cleaning
Current density
Annealing
Specifications
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wiget, R., Pécz, B., & Burte, E. P. (1995). Silicon direct bonding (SDB) - a substrate material for electronic devices. In Proceedings of the International Conference on Power Electronics and Drive Systems (Vol. 1, pp. 75-81). IEEE.

Silicon direct bonding (SDB) - a substrate material for electronic devices. / Wiget, R.; Pécz, B.; Burte, E. P.

Proceedings of the International Conference on Power Electronics and Drive Systems. Vol. 1 IEEE, 1995. p. 75-81.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wiget, R, Pécz, B & Burte, EP 1995, Silicon direct bonding (SDB) - a substrate material for electronic devices. in Proceedings of the International Conference on Power Electronics and Drive Systems. vol. 1, IEEE, pp. 75-81, Proceedings of the 1995 International Conference on Power Electronics and Drive Systems. Part 2 (of 2), Singapore, Singapore, 2/21/95.
Wiget R, Pécz B, Burte EP. Silicon direct bonding (SDB) - a substrate material for electronic devices. In Proceedings of the International Conference on Power Electronics and Drive Systems. Vol. 1. IEEE. 1995. p. 75-81
Wiget, R. ; Pécz, B. ; Burte, E. P. / Silicon direct bonding (SDB) - a substrate material for electronic devices. Proceedings of the International Conference on Power Electronics and Drive Systems. Vol. 1 IEEE, 1995. pp. 75-81
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