Silicon direct bonding (SDB) - a substrate material for electronic devices

R. Wiget, B. Pecz, E. P. Burte

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

A silicon direct bonding process was developed using a special chamber for cleaning, contacting and prebonding wafers up to 100 mm. After prebonding the wafers at 200 °C, annealing was carried out at temperatures ranging from 600 °C to 1180 °C for times between 30 minutes and 20 hours. Bare silicon and oxidized wafers were bonded. The electrical specification was done by evaluating the I-V characteristics with respect to breakdown, reverse current, ideality factor, series and parallel resistance (RS, RP). A strong dependence of RS and RP on bonding temperature and time was observed. In order to proof the viability of the bonded substrate for power devices, we fabricated p-i-n diodes. The diodes exhibit breakdown voltages up to 1400 V and forward current densities of 2 A/mm2. These p-i-n diodes were superior to diodes fabricated simultaneously on epitaxial material.

Original languageEnglish
Pages75-81
Number of pages7
Publication statusPublished - Jan 1 1995
EventProceedings of the 1995 International Conference on Power Electronics and Drive Systems. Part 2 (of 2) - Singapore, Singapore
Duration: Feb 21 1995Feb 24 1995

Other

OtherProceedings of the 1995 International Conference on Power Electronics and Drive Systems. Part 2 (of 2)
CitySingapore, Singapore
Period2/21/952/24/95

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wiget, R., Pecz, B., & Burte, E. P. (1995). Silicon direct bonding (SDB) - a substrate material for electronic devices. 75-81. Paper presented at Proceedings of the 1995 International Conference on Power Electronics and Drive Systems. Part 2 (of 2), Singapore, Singapore, .