Silicon carbide nanocrystals produced by femtosecond laser pulses

S. Tóth, P. Németh, Péter Rácz, László Himics, P. Dombi, M. Koós

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ultrashort laser pulses provide an excellent dry and clean patterning technique in nanoscience for preparing quantum dots and quantum wires as well as depositing nanocrystalline grains of technologically important semiconductors. Here, we experimentally demonstrate the formation of silicon carbide (SiC) nanocrystals with wide size distribution (70–700 nm) by irradiation of carbon layers deposited on silicon wafers with ultrashort laser pulses of 42 fs pulse duration with 1 kHz repetition rate. Surface morphology of the laser irradiated region monitored by scanning electron microscopy (SEM) exhibits nanocrystalline agglomerates of various size in the vicinity of ablated craters. Transmission electron microscopy (TEM) measurements show the occurrence of ~ 100 nm size cubic and hexagonal SiC polytypes in addition to Si and amorphous silica nanoparticles. Independent sample diagnostics with Raman active phonon modes also indicates the formation and solidification of several SiC polytypes, which occur around the irradiated crater region. Further development of this laser-induced process and the accurate control of the laser pulse parameters can open new routes for preparing tailor-made SiC nanomaterials that have useful properties for electronic and biomedical applications.

Original languageEnglish
Pages (from-to)96-102
Number of pages7
JournalDiamond and Related Materials
Volume81
DOIs
Publication statusPublished - Jan 1 2018

Fingerprint

Ultrashort pulses
Silicon carbide
silicon carbides
Nanocrystals
nanocrystals
pulses
lasers
Laser pulses
craters
Nanoscience
Semiconductor quantum wires
Lasers
Silicon wafers
Nanostructured materials
Silicon Dioxide
Semiconductor quantum dots
Surface morphology
Solidification
quantum wires
Carbon

Keywords

  • Femtosecond laser pulses
  • Nanocrystals
  • Raman scattering
  • Silicon carbide
  • TEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Silicon carbide nanocrystals produced by femtosecond laser pulses. / Tóth, S.; Németh, P.; Rácz, Péter; Himics, László; Dombi, P.; Koós, M.

In: Diamond and Related Materials, Vol. 81, 01.01.2018, p. 96-102.

Research output: Contribution to journalArticle

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AU - Koós, M.

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