Abstract
Polycrystallinity, cracking, fragment boundaries, mechanical stress, dislocations and stacking faults were investigated in epitaxial SiGe structures of abrupt junction, prepared by UHV evaporation. The structural properties were studied as a function of the condensation temperature, the thickness of the grown layer and the cooling rate. The methods used were: microscopic and Laue patterns, surface reflection X-ray topographical studies, and radius of curvature measurements. It was found that from the point of view of the cracking the condensation temperature plays hardly any role between 880 ° and 500 °C, nor does the layer thickness between 2 and 20 micro m; it is the thermal expansion effect which is decisive. Under our experimental conditions, in samples cooled down from the condensation temperature to 300 °C at a rate not greater than 10 °C/min the cracking effect decreased to a minimal value. The true stress of SiGe structures grown and cooled under suitably chosen conditions was found to be about 1.5 × 109 dyn/cm2 and was independent of the preparation conditions. The polycrystallinity of the Ge layers was affected by the condensation temperature and by the surface purity of the Si single-crystal substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 59-69 |
| Number of pages | 11 |
| Journal | Thin Solid Films |
| Volume | 11 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1972 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
SiGe heteroepitaxial structures evaporated in ultra-high vacuum. / Pfeifer, J.; Varga, L.; Szentpáli, B.
In: Thin Solid Films, Vol. 11, No. 1, 1972, p. 59-69.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - SiGe heteroepitaxial structures evaporated in ultra-high vacuum
AU - Pfeifer, J.
AU - Varga, L.
AU - Szentpáli, B.
PY - 1972
Y1 - 1972
N2 - Polycrystallinity, cracking, fragment boundaries, mechanical stress, dislocations and stacking faults were investigated in epitaxial SiGe structures of abrupt junction, prepared by UHV evaporation. The structural properties were studied as a function of the condensation temperature, the thickness of the grown layer and the cooling rate. The methods used were: microscopic and Laue patterns, surface reflection X-ray topographical studies, and radius of curvature measurements. It was found that from the point of view of the cracking the condensation temperature plays hardly any role between 880 ° and 500 °C, nor does the layer thickness between 2 and 20 micro m; it is the thermal expansion effect which is decisive. Under our experimental conditions, in samples cooled down from the condensation temperature to 300 °C at a rate not greater than 10 °C/min the cracking effect decreased to a minimal value. The true stress of SiGe structures grown and cooled under suitably chosen conditions was found to be about 1.5 × 109 dyn/cm2 and was independent of the preparation conditions. The polycrystallinity of the Ge layers was affected by the condensation temperature and by the surface purity of the Si single-crystal substrate.
AB - Polycrystallinity, cracking, fragment boundaries, mechanical stress, dislocations and stacking faults were investigated in epitaxial SiGe structures of abrupt junction, prepared by UHV evaporation. The structural properties were studied as a function of the condensation temperature, the thickness of the grown layer and the cooling rate. The methods used were: microscopic and Laue patterns, surface reflection X-ray topographical studies, and radius of curvature measurements. It was found that from the point of view of the cracking the condensation temperature plays hardly any role between 880 ° and 500 °C, nor does the layer thickness between 2 and 20 micro m; it is the thermal expansion effect which is decisive. Under our experimental conditions, in samples cooled down from the condensation temperature to 300 °C at a rate not greater than 10 °C/min the cracking effect decreased to a minimal value. The true stress of SiGe structures grown and cooled under suitably chosen conditions was found to be about 1.5 × 109 dyn/cm2 and was independent of the preparation conditions. The polycrystallinity of the Ge layers was affected by the condensation temperature and by the surface purity of the Si single-crystal substrate.
UR - http://www.scopus.com/inward/record.url?scp=0015374874&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0015374874&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(72)90345-8
DO - 10.1016/0040-6090(72)90345-8
M3 - Article
AN - SCOPUS:0015374874
VL - 11
SP - 59
EP - 69
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -