SiC epitaxial growth on Si(100) substrates using carbon tetrabromide

G. Attolini, Matteo Bosi, Francesca Rossi, Bernard Enrico Watts, Giancarlo Salviati, Gabor Battistig, László Dobos, Béla Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages139-142
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - Jan 1 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

Keywords

  • 3C-SiC
  • Carbon tetrabromide
  • Faceting
  • TEM
  • VPE

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Attolini, G., Bosi, M., Rossi, F., Watts, B. E., Salviati, G., Battistig, G., Dobos, L., & Pécz, B. (2010). SiC epitaxial growth on Si(100) substrates using carbon tetrabromide. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 139-142). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.139