Si surface preparation and passivation by vapor phase of heavy water

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1 Citation (Scopus)

Abstract

In our previously published paper [1, 2] we demonstrated that deuterium adsorbs on Si surface at room temperature much stronger than hydrogen [3, 4]. Moreover, in case of deuterium passivated wafers the vacuum storage can be omitted without risking the non-controlled native oxidation of silicon for up to 5 hours or more. It could be a suitable and more robust surface cleaning and passivation process for the industry, but heavy water is expensive. As a cheaper procedure, we present in this paper the results of our studies in which the Si surface is treated in vapor phase of heavy-water (D2O) + 50% HF (e.g. 20:1) mixture at 25, 40, 50 and 65 °C, for 1, 10 and 60 minutes. The surface evolution of the D-passivated surface was followed by contact angle measurements, by spectroscopic ellipsometry (SE), by atomic force microscopy (AFM), by X-ray photoelectron spectroscopy (XPS), by transmission electron microscopy (TEM) and by infrared absorption spectroscopy (IR) qualification and the results were compared to the H-passivated Si surface. It turned out that 1 min vapor phase treatment at 65 °C was enough to remove the native oxide and to passivate the Si surface without any degradation of the atomic surface flatness. Combination of D (or H) passivation with rapid thermal process (RTP) based on the thermal desorption kinetics of the adsorbed D and/or H layers on Si is a promising method for improved interface engineering and for better initial reactions in case of ultra thin dielectric layer formations.

Original languageEnglish
Title of host publication16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
Pages219-228
Number of pages10
DOIs
Publication statusPublished - Dec 1 2008
Event16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 - Las Vegas, NV, United States
Duration: Sep 30 2008Oct 3 2008

Publication series

Name16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008

Other

Other16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
CountryUnited States
CityLas Vegas, NV
Period9/30/0810/3/08

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Edit Pap, A., Petrik, P., Pecz, B., Battistig, G., Barsony, I., Szekrenyes, Z., Kamaras, K., Schay, Z., & Nenyei, Z. (2008). Si surface preparation and passivation by vapor phase of heavy water. In 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 (pp. 219-228). [4690558] (16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008). https://doi.org/10.1109/RTP.2008.4690558