Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models

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19 Citations (Scopus)

Abstract

Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.

Original languageEnglish
Pages (from-to)76-79
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume38
Issue number1-2
DOIs
Publication statusPublished - Apr 2007

Fingerprint

Semiconductor device models
Silicon nitride
silicon nitrides
Nanocrystals
nanocrystals
Spectroscopic ellipsometry
ellipsometry
low pressure
Vapors
vapors
Substrates
silicon nitride

Keywords

  • Dielectric function
  • Si nanocrystals
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models",
abstract = "Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.",
keywords = "Dielectric function, Si nanocrystals, Spectroscopic ellipsometry",
author = "P. Basa and P. Petrik and M. Fried and L. Dobos and B. P{\'e}cz and L. T{\'o}th",
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T1 - Si nanocrystals in silicon nitride

T2 - An ellipsometric study using parametric semiconductor models

AU - Basa, P.

AU - Petrik, P.

AU - Fried, M.

AU - Dobos, L.

AU - Pécz, B.

AU - Tóth, L.

PY - 2007/4

Y1 - 2007/4

N2 - Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.

AB - Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.

KW - Dielectric function

KW - Si nanocrystals

KW - Spectroscopic ellipsometry

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SP - 76

EP - 79

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

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