Short repetitive pulses of 50-75 kV applied to plasma immersion implantation of aerospace materials

Jose O. Rossi, Mário Ueda, Carina B. Mello, Andre Ricardo Marcondes, A. Tóth, Graziela da Silva

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High-energy plasma immersion ion implantation (PIII) in the range of 50-100 keV is an interesting alternative of surface modification technique to more commonly investigated beam processing of materials in such energies. A stacked Blumlein (SB) technique was used to reach high-voltage pulses of 30 to 100 kV, with much cheaper and electronically simpler configuration compared to a hard-tube (HT) system previously used by another PIII group. The reason is because Blumlein systems employ cheaper thyratrons with higher current capabilities compared to HT tetrodes. Although HT modulators provide higher retained peak dose and variable pulse duration, Blumlein pulsers are preferable for low-cost systems with lower dose and high-energy implantation. The disadvantages of Blumlein systems are their fixed pulse duration and lower repetition rate (<300 Hz) during operation regime. In this paper, PIII results obtained for SB operations between 50 and 75 kV will be discussed using an improved vacuum system and a proper high-voltage feed-through of 75 kV. High-energy (up to 75 keV) short (1.2 μs) repetitive (100 Hz) pulses were delivered to produce the plasma and carry out nitrogen ion implantation in the high-voltage glow-discharge mode. Al7475, Al5052, Ti6Al4V alloys, and ultrahigh-molecular-weight polyethylene polymer are materials of great interest to the aerospace field which are being treated by this high-energy PIII technique.

Original languageEnglish
Pages (from-to)204-210
Number of pages7
JournalIEEE Transactions on Plasma Science
Volume37
Issue number1
DOIs
Publication statusPublished - 2009

Fingerprint

submerging
ion implantation
implantation
high voltages
pulses
tubes
tetrodes
pulse duration
thyratrons
energy
dosage
nitrogen ions
vacuum systems
glow discharges
high current
polyethylenes
modulators
molecular weight
repetition
polymers

Keywords

  • Aerospace materials
  • High energy
  • Plasma implantation
  • Surface treatment

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Nuclear and High Energy Physics

Cite this

Short repetitive pulses of 50-75 kV applied to plasma immersion implantation of aerospace materials. / Rossi, Jose O.; Ueda, Mário; Mello, Carina B.; Marcondes, Andre Ricardo; Tóth, A.; da Silva, Graziela.

In: IEEE Transactions on Plasma Science, Vol. 37, No. 1, 2009, p. 204-210.

Research output: Contribution to journalArticle

Rossi, Jose O. ; Ueda, Mário ; Mello, Carina B. ; Marcondes, Andre Ricardo ; Tóth, A. ; da Silva, Graziela. / Short repetitive pulses of 50-75 kV applied to plasma immersion implantation of aerospace materials. In: IEEE Transactions on Plasma Science. 2009 ; Vol. 37, No. 1. pp. 204-210.
@article{64351de73a0d4ee89e3825b01c5207f2,
title = "Short repetitive pulses of 50-75 kV applied to plasma immersion implantation of aerospace materials",
abstract = "High-energy plasma immersion ion implantation (PIII) in the range of 50-100 keV is an interesting alternative of surface modification technique to more commonly investigated beam processing of materials in such energies. A stacked Blumlein (SB) technique was used to reach high-voltage pulses of 30 to 100 kV, with much cheaper and electronically simpler configuration compared to a hard-tube (HT) system previously used by another PIII group. The reason is because Blumlein systems employ cheaper thyratrons with higher current capabilities compared to HT tetrodes. Although HT modulators provide higher retained peak dose and variable pulse duration, Blumlein pulsers are preferable for low-cost systems with lower dose and high-energy implantation. The disadvantages of Blumlein systems are their fixed pulse duration and lower repetition rate (<300 Hz) during operation regime. In this paper, PIII results obtained for SB operations between 50 and 75 kV will be discussed using an improved vacuum system and a proper high-voltage feed-through of 75 kV. High-energy (up to 75 keV) short (1.2 μs) repetitive (100 Hz) pulses were delivered to produce the plasma and carry out nitrogen ion implantation in the high-voltage glow-discharge mode. Al7475, Al5052, Ti6Al4V alloys, and ultrahigh-molecular-weight polyethylene polymer are materials of great interest to the aerospace field which are being treated by this high-energy PIII technique.",
keywords = "Aerospace materials, High energy, Plasma implantation, Surface treatment",
author = "Rossi, {Jose O.} and M{\'a}rio Ueda and Mello, {Carina B.} and Marcondes, {Andre Ricardo} and A. T{\'o}th and {da Silva}, Graziela",
year = "2009",
doi = "10.1109/TPS.2008.2005832",
language = "English",
volume = "37",
pages = "204--210",
journal = "IEEE Transactions on Plasma Science",
issn = "0093-3813",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Short repetitive pulses of 50-75 kV applied to plasma immersion implantation of aerospace materials

AU - Rossi, Jose O.

AU - Ueda, Mário

AU - Mello, Carina B.

AU - Marcondes, Andre Ricardo

AU - Tóth, A.

AU - da Silva, Graziela

PY - 2009

Y1 - 2009

N2 - High-energy plasma immersion ion implantation (PIII) in the range of 50-100 keV is an interesting alternative of surface modification technique to more commonly investigated beam processing of materials in such energies. A stacked Blumlein (SB) technique was used to reach high-voltage pulses of 30 to 100 kV, with much cheaper and electronically simpler configuration compared to a hard-tube (HT) system previously used by another PIII group. The reason is because Blumlein systems employ cheaper thyratrons with higher current capabilities compared to HT tetrodes. Although HT modulators provide higher retained peak dose and variable pulse duration, Blumlein pulsers are preferable for low-cost systems with lower dose and high-energy implantation. The disadvantages of Blumlein systems are their fixed pulse duration and lower repetition rate (<300 Hz) during operation regime. In this paper, PIII results obtained for SB operations between 50 and 75 kV will be discussed using an improved vacuum system and a proper high-voltage feed-through of 75 kV. High-energy (up to 75 keV) short (1.2 μs) repetitive (100 Hz) pulses were delivered to produce the plasma and carry out nitrogen ion implantation in the high-voltage glow-discharge mode. Al7475, Al5052, Ti6Al4V alloys, and ultrahigh-molecular-weight polyethylene polymer are materials of great interest to the aerospace field which are being treated by this high-energy PIII technique.

AB - High-energy plasma immersion ion implantation (PIII) in the range of 50-100 keV is an interesting alternative of surface modification technique to more commonly investigated beam processing of materials in such energies. A stacked Blumlein (SB) technique was used to reach high-voltage pulses of 30 to 100 kV, with much cheaper and electronically simpler configuration compared to a hard-tube (HT) system previously used by another PIII group. The reason is because Blumlein systems employ cheaper thyratrons with higher current capabilities compared to HT tetrodes. Although HT modulators provide higher retained peak dose and variable pulse duration, Blumlein pulsers are preferable for low-cost systems with lower dose and high-energy implantation. The disadvantages of Blumlein systems are their fixed pulse duration and lower repetition rate (<300 Hz) during operation regime. In this paper, PIII results obtained for SB operations between 50 and 75 kV will be discussed using an improved vacuum system and a proper high-voltage feed-through of 75 kV. High-energy (up to 75 keV) short (1.2 μs) repetitive (100 Hz) pulses were delivered to produce the plasma and carry out nitrogen ion implantation in the high-voltage glow-discharge mode. Al7475, Al5052, Ti6Al4V alloys, and ultrahigh-molecular-weight polyethylene polymer are materials of great interest to the aerospace field which are being treated by this high-energy PIII technique.

KW - Aerospace materials

KW - High energy

KW - Plasma implantation

KW - Surface treatment

UR - http://www.scopus.com/inward/record.url?scp=58549088482&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58549088482&partnerID=8YFLogxK

U2 - 10.1109/TPS.2008.2005832

DO - 10.1109/TPS.2008.2005832

M3 - Article

AN - SCOPUS:58549088482

VL - 37

SP - 204

EP - 210

JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

SN - 0093-3813

IS - 1

ER -