Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy

A. Bosacchi, E. Gombia, R. Mosca, S. Franchi, A. Carnera, A. Gasparotto

Research output: Contribution to journalArticle

Abstract

We correlate the Si concentration measured by secondary ion mass spectrometry (SIMS) and the net donor concentration in GaAs:Si grown by atomic layer molecular beam epitaxy (ALMBE); Si was supplied during: (a) both the As and the Ga subcycles, (b) the As subcycle, and (c) the Ga subcycle; the layers were grown at temperatures in the 300-530°C range. The results show that Si incorporation and its compensation depend on the Si-supply scheme and that the extent of compensation decreases with the growth temperature. We also study the deep levels in the ALMBE GaAs grown under the above conditions. Our results show the occurrence of M1, M3 and M4 levels with concentrations that are: (i) essentially independent of both the Si supply scheme and the ALMBE growth temperature, (ii) close to those of MBE GaAs grown at 600°C, and (iii) up to 2 orders of magnitude lower than that of GaAs prepared by molecular beam epitaxy (MBE) at similar temperatures.

Original languageEnglish
Pages (from-to)261-265
Number of pages5
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 1
DOIs
Publication statusPublished - May 1 1995

Fingerprint

Atomic layer epitaxy
atomic layer epitaxy
Molecular beam epitaxy
molecular beam epitaxy
Growth temperature
temperature
Secondary ion mass spectrometry
secondary ion mass spectrometry
gallium arsenide
occurrences
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy. / Bosacchi, A.; Gombia, E.; Mosca, R.; Franchi, S.; Carnera, A.; Gasparotto, A.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 1, 01.05.1995, p. 261-265.

Research output: Contribution to journalArticle

Bosacchi, A, Gombia, E, Mosca, R, Franchi, S, Carnera, A & Gasparotto, A 1995, 'Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy', Journal of Crystal Growth, vol. 150, no. 1 -4 pt 1, pp. 261-265. https://doi.org/10.1016/0022-0248(94)00906-6
Bosacchi, A. ; Gombia, E. ; Mosca, R. ; Franchi, S. ; Carnera, A. ; Gasparotto, A. / Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy. In: Journal of Crystal Growth. 1995 ; Vol. 150, No. 1 -4 pt 1. pp. 261-265.
@article{7cf0b372c8e84cddafc28da7bb6c9b47,
title = "Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy",
abstract = "We correlate the Si concentration measured by secondary ion mass spectrometry (SIMS) and the net donor concentration in GaAs:Si grown by atomic layer molecular beam epitaxy (ALMBE); Si was supplied during: (a) both the As and the Ga subcycles, (b) the As subcycle, and (c) the Ga subcycle; the layers were grown at temperatures in the 300-530°C range. The results show that Si incorporation and its compensation depend on the Si-supply scheme and that the extent of compensation decreases with the growth temperature. We also study the deep levels in the ALMBE GaAs grown under the above conditions. Our results show the occurrence of M1, M3 and M4 levels with concentrations that are: (i) essentially independent of both the Si supply scheme and the ALMBE growth temperature, (ii) close to those of MBE GaAs grown at 600°C, and (iii) up to 2 orders of magnitude lower than that of GaAs prepared by molecular beam epitaxy (MBE) at similar temperatures.",
author = "A. Bosacchi and E. Gombia and R. Mosca and S. Franchi and A. Carnera and A. Gasparotto",
year = "1995",
month = "5",
day = "1",
doi = "10.1016/0022-0248(94)00906-6",
language = "English",
volume = "150",
pages = "261--265",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1 -4 pt 1",

}

TY - JOUR

T1 - Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy

AU - Bosacchi, A.

AU - Gombia, E.

AU - Mosca, R.

AU - Franchi, S.

AU - Carnera, A.

AU - Gasparotto, A.

PY - 1995/5/1

Y1 - 1995/5/1

N2 - We correlate the Si concentration measured by secondary ion mass spectrometry (SIMS) and the net donor concentration in GaAs:Si grown by atomic layer molecular beam epitaxy (ALMBE); Si was supplied during: (a) both the As and the Ga subcycles, (b) the As subcycle, and (c) the Ga subcycle; the layers were grown at temperatures in the 300-530°C range. The results show that Si incorporation and its compensation depend on the Si-supply scheme and that the extent of compensation decreases with the growth temperature. We also study the deep levels in the ALMBE GaAs grown under the above conditions. Our results show the occurrence of M1, M3 and M4 levels with concentrations that are: (i) essentially independent of both the Si supply scheme and the ALMBE growth temperature, (ii) close to those of MBE GaAs grown at 600°C, and (iii) up to 2 orders of magnitude lower than that of GaAs prepared by molecular beam epitaxy (MBE) at similar temperatures.

AB - We correlate the Si concentration measured by secondary ion mass spectrometry (SIMS) and the net donor concentration in GaAs:Si grown by atomic layer molecular beam epitaxy (ALMBE); Si was supplied during: (a) both the As and the Ga subcycles, (b) the As subcycle, and (c) the Ga subcycle; the layers were grown at temperatures in the 300-530°C range. The results show that Si incorporation and its compensation depend on the Si-supply scheme and that the extent of compensation decreases with the growth temperature. We also study the deep levels in the ALMBE GaAs grown under the above conditions. Our results show the occurrence of M1, M3 and M4 levels with concentrations that are: (i) essentially independent of both the Si supply scheme and the ALMBE growth temperature, (ii) close to those of MBE GaAs grown at 600°C, and (iii) up to 2 orders of magnitude lower than that of GaAs prepared by molecular beam epitaxy (MBE) at similar temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0029306674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029306674&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)00906-6

DO - 10.1016/0022-0248(94)00906-6

M3 - Article

VL - 150

SP - 261

EP - 265

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1 -4 pt 1

ER -