Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

T. N. Mamedov, I. L. Chaplygin, V. N. Duginov, V. N. Gorelkin, D. Herlach, J. Major, A. V. Stoykov, M. Schefzik, U. Zimmermann

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Abstract

The residual polarization of negative muons has been studied for phosphorus-doped ([P]: 1.6 × 1013 cm-3) and antimony-doped ([Sb]: 2 × 1018 cm-3) silicon crystals. The measurements were carried out in a transverse magnetic field of 0.1 T over the temperature region 4 K-300 K. The ionized and neutral states of the μAl pseudo-acceptor were observed in antimony-doped silicon for the first time. The rate of transition from the neutral to the ionized state of the acceptor was found to be equal to 1.2 × 106 s-1 over the temperature range 4 K-12 K. The estimated rates of relaxation of the magnetic moment of the acceptor-centre electron shell are 5 × 1010 s-1 and 1.6 × 1012 s-1 in phosphorus-doped silicon and 6 × 1011 s-1 and 6.7 × 1012 s-1 in antimony-doped silicon at 4 K and 15 K respectively. The experimental results obtained are interpreted in terms of spin-lattice relaxation of the acceptor magnetic moment and of the acceptor-donor pair formation.

Original languageEnglish
Pages (from-to)2849-2860
Number of pages12
JournalJournal of Physics Condensed Matter
Volume11
Issue number13
DOIs
Publication statusPublished - Apr 5 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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    Mamedov, T. N., Chaplygin, I. L., Duginov, V. N., Gorelkin, V. N., Herlach, D., Major, J., Stoykov, A. V., Schefzik, M., & Zimmermann, U. (1999). Shallow acceptor centres in silicon studied by means of spin rotation of negative muons. Journal of Physics Condensed Matter, 11(13), 2849-2860. https://doi.org/10.1088/0953-8984/11/13/019