Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin films

M. Fleischer, H. Meixner

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

Polycrystalline semiconducting Ga2O3 thin films represent a promising new basic material for sensors used to detect reducing gases at operating temperatures up to 650 °C. The electrical conductance of the Ga2O3 films provides the sensor signal. Fundamental investigations with two-component gas mixtures of a reducing gas in an inert gas are reported. The results show a long-term stable dependency of the conductance of the Ga2O3 thin films on the partial pressure of the reducing gas according to G ∼ pr.g. 1 3 at constant sensor temperature for the case of H2 and CO. In contrast to other metal oxides, Ga2O3 exhibits no disturbing bulk O2 sensitivity below 700 °C.

Original languageEnglish
Pages (from-to)257-261
Number of pages5
JournalSensors and Actuators: B. Chemical
Volume6
Issue number1-3
DOIs
Publication statusPublished - Jan 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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