Polycrystalline semiconducting Ga2O3 thin films represent a promising new basic material for sensors used to detect reducing gases at operating temperatures up to 650 °C. The electrical conductance of the Ga2O3 films provides the sensor signal. Fundamental investigations with two-component gas mixtures of a reducing gas in an inert gas are reported. The results show a long-term stable dependency of the conductance of the Ga2O3 thin films on the partial pressure of the reducing gas according to G ∼ pr.g. 1 3 at constant sensor temperature for the case of H2 and CO. In contrast to other metal oxides, Ga2O3 exhibits no disturbing bulk O2 sensitivity below 700 °C.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry