Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano-Patterned SiC/Si(100) Template

Vasily Bessolov, Anna Zubkova, Elena Konenkova, Steven Konenkov, Sergey Kukushkin, Tatiana Orlova, S. Rodin, Vladimir Rubets, Dmitry Kibalov, Valery Smirnov

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new approach is proposed to the synthesis of a semipolar GaN on a Si(100) substrate at the surface of which the V-shaped nanostructures with the characteristic size of elements as low as 100 nm are formed. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables formation of the GaN(10–11) layer characterized by the full width at half maximum value as low as ωθ ≈45 arcmin for the X-ray diffraction rocking curve. The model based on anisotropic nucleation of AlN on the V-shaped nanostructure is proposed to explain the growth of the GaN layer in a single semipolar direction.

Original languageEnglish
Article number1800268
JournalPhysica Status Solidi (B) Basic Research
DOIs
Publication statusAccepted/In press - Jan 1 2018

Keywords

  • GaN
  • nano-patterned substrates
  • semipolar orientation
  • Si
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Bessolov, V., Zubkova, A., Konenkova, E., Konenkov, S., Kukushkin, S., Orlova, T., Rodin, S., Rubets, V., Kibalov, D., & Smirnov, V. (Accepted/In press). Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano-Patterned SiC/Si(100) Template. Physica Status Solidi (B) Basic Research, [1800268]. https://doi.org/10.1002/pssb.201800268