A new approach is proposed to the synthesis of a semipolar GaN on a Si(100) substrate at the surface of which the V-shaped nanostructures with the characteristic size of elements as low as 100 nm are formed. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables formation of the GaN(10–11) layer characterized by the full width at half maximum value as low as ωθ ≈45 arcmin for the X-ray diffraction rocking curve. The model based on anisotropic nucleation of AlN on the V-shaped nanostructure is proposed to explain the growth of the GaN layer in a single semipolar direction.
- nano-patterned substrates
- semipolar orientation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics