Semiconductor THz source scalable to mJ energy

J. A. Fulop, Gy Polonyi, B. Monoszlai, G. Andriukaitis, T. Balciunas, A. Pugzlys, A. Baltuska, J. Hebling

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

THz pulses up to 14 J energy and 0.7% efficiency were generated by ZnTe sources with tilted pulse front pumping at 1.7 μm, above the three-photon absorption edge. A monolithic ZnTe contact-grating source was demonstrated, which is scalable to mJ energies.

Original languageEnglish
Title of host publication41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
PublisherIEEE Computer Society
Volume2016-November
ISBN (Electronic)9781467384858
DOIs
Publication statusPublished - Nov 28 2016
Event41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Copenhagen, Denmark
Duration: Sep 25 2016Sep 30 2016

Other

Other41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
CountryDenmark
CityCopenhagen
Period9/25/169/30/16

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ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Fulop, J. A., Polonyi, G., Monoszlai, B., Andriukaitis, G., Balciunas, T., Pugzlys, A., Baltuska, A., & Hebling, J. (2016). Semiconductor THz source scalable to mJ energy. In 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 (Vol. 2016-November). [7758390] IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2016.7758390