Self-consistent electron state calculations on bond-centered impurities in silicon

M. Walk, G. Papp

Research output: Contribution to journalArticle

Abstract

Self-consistent electron state calculations using a local soft-core pseudopotential were performed on Si crystals with different bond-centered impurities representing the II-VI group of elements. Besides total valence charge density and band structure the charge density of some impurity induced states was examined.

Original languageEnglish
Pages (from-to)333-339
Number of pages7
JournalActa Physica Hungarica
Volume70
Issue number4
DOIs
Publication statusPublished - Oct 1991

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electron states
impurities
silicon
pseudopotentials
valence
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Self-consistent electron state calculations on bond-centered impurities in silicon. / Walk, M.; Papp, G.

In: Acta Physica Hungarica, Vol. 70, No. 4, 10.1991, p. 333-339.

Research output: Contribution to journalArticle

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