Selective growth of nanocrystalline 3C-SiC thin films on Si

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxial formation of SiC nanocrystals has been investigated on single crystal silicon surfaces. A simple and cheap method using reactive annealing in CO has been developed and patented by our group (BME AFT and MTA MFA). By this technique epitaxial 3C-SiC nanocrystals can be grown at the Si side of a SiO2/Si interface without void formation at the SiC/Si interface. CO diffusion and SiC nanocrystal formation on different silicon based systems (SiO2/Si, Si3N4/Si and SiO2/LPCVD poly-Si) after CO treatment at 105 Pa at elevated temperatures (T>1000°C) will be presented. By optimizing the annealing time a thin continuous nanocrystalline SiC layer has been formed. Applying a patterned Si3N4 capping layer as a barrier layer against CO diffusion, SiC nanocrystal formation at the Si3N4/Si interface is inhibited. We will present the selective growth of SiC nanocrystals using the before mentioned technique.

Original languageEnglish
Title of host publication2010 Wide Bandgap Cubic Semiconductors
Subtitle of host publicationFrom Growth to Devices - Proceedings of the E-MRS Symposium F
Pages23-26
Number of pages4
DOIs
Publication statusPublished - Dec 1 2010
EventE-MRS Symposium F on 2010 Wide Bandgap Cubic Semiconductors: From Growth to Devices - Strasbourg, France
Duration: Jun 8 2010Jun 10 2010

Publication series

NameAIP Conference Proceedings
Volume1292
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherE-MRS Symposium F on 2010 Wide Bandgap Cubic Semiconductors: From Growth to Devices
CountryFrance
CityStrasbourg
Period6/8/106/10/10

Keywords

  • CO annealing
  • Selective growth
  • SiC
  • SiN

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Beke, D., Pongrácz, A., Battistig, G., Josepovits, K., & Pécz, B. (2010). Selective growth of nanocrystalline 3C-SiC thin films on Si. In 2010 Wide Bandgap Cubic Semiconductors: From Growth to Devices - Proceedings of the E-MRS Symposium F (pp. 23-26). (AIP Conference Proceedings; Vol. 1292). https://doi.org/10.1063/1.3518302