Selective etching of armchair edges in graphite

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We present an easy and fast procedure for producing graphene and few layer graphite nanostructures with edges of predefined crystallographic orientation. By annealing graphite in an oxygen containing atmosphere, of controlled composition hexagonal surface structures can be etched in a controlled way. We show that the process can be made crystallographically selective and the resulting edges are of armchair type. The dimensions of the resulting nanostructures can be well controlled by the oxidation rate, through accurately adjusting the etching parameters, such as oxygen concentration, annealing temperature and duration. The oxidation preferentially starts at defect sites either naturally present in the sample or produced on purpose, the latter holding the promise of a more accurate control over the resulting structures.

Original languageEnglish
Pages (from-to)332-338
Number of pages7
JournalCarbon
Volume56
DOIs
Publication statusPublished - May 2013

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Graphite
Etching
Nanostructures
Annealing
Oxidation
Oxygen
Surface structure
Graphene
Defects
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Selective etching of armchair edges in graphite. / Dobrik, G.; Tapasztó, L.; Bíró, L.

In: Carbon, Vol. 56, 05.2013, p. 332-338.

Research output: Contribution to journalArticle

@article{4a23b4269a6042eca3bb17062a54903e,
title = "Selective etching of armchair edges in graphite",
abstract = "We present an easy and fast procedure for producing graphene and few layer graphite nanostructures with edges of predefined crystallographic orientation. By annealing graphite in an oxygen containing atmosphere, of controlled composition hexagonal surface structures can be etched in a controlled way. We show that the process can be made crystallographically selective and the resulting edges are of armchair type. The dimensions of the resulting nanostructures can be well controlled by the oxidation rate, through accurately adjusting the etching parameters, such as oxygen concentration, annealing temperature and duration. The oxidation preferentially starts at defect sites either naturally present in the sample or produced on purpose, the latter holding the promise of a more accurate control over the resulting structures.",
author = "G. Dobrik and L. Tapaszt{\'o} and L. B{\'i}r{\'o}",
year = "2013",
month = "5",
doi = "10.1016/j.carbon.2013.01.018",
language = "English",
volume = "56",
pages = "332--338",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Selective etching of armchair edges in graphite

AU - Dobrik, G.

AU - Tapasztó, L.

AU - Bíró, L.

PY - 2013/5

Y1 - 2013/5

N2 - We present an easy and fast procedure for producing graphene and few layer graphite nanostructures with edges of predefined crystallographic orientation. By annealing graphite in an oxygen containing atmosphere, of controlled composition hexagonal surface structures can be etched in a controlled way. We show that the process can be made crystallographically selective and the resulting edges are of armchair type. The dimensions of the resulting nanostructures can be well controlled by the oxidation rate, through accurately adjusting the etching parameters, such as oxygen concentration, annealing temperature and duration. The oxidation preferentially starts at defect sites either naturally present in the sample or produced on purpose, the latter holding the promise of a more accurate control over the resulting structures.

AB - We present an easy and fast procedure for producing graphene and few layer graphite nanostructures with edges of predefined crystallographic orientation. By annealing graphite in an oxygen containing atmosphere, of controlled composition hexagonal surface structures can be etched in a controlled way. We show that the process can be made crystallographically selective and the resulting edges are of armchair type. The dimensions of the resulting nanostructures can be well controlled by the oxidation rate, through accurately adjusting the etching parameters, such as oxygen concentration, annealing temperature and duration. The oxidation preferentially starts at defect sites either naturally present in the sample or produced on purpose, the latter holding the promise of a more accurate control over the resulting structures.

UR - http://www.scopus.com/inward/record.url?scp=84875209877&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875209877&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2013.01.018

DO - 10.1016/j.carbon.2013.01.018

M3 - Article

AN - SCOPUS:84875209877

VL - 56

SP - 332

EP - 338

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -