Selective Epitaxy of Submicron GaN Structures

W. V. Lundin, A. F. Tsatsulnikov, S. N. Rodin, A. V. Sakharov, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, V. P. Evtikhiev

Research output: Contribution to journalArticle

Abstract

Abstract: The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized.

Original languageEnglish
Pages (from-to)2118-2120
Number of pages3
JournalSemiconductors
Volume53
Issue number16
DOIs
Publication statusPublished - Dec 1 2019

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Keywords

  • FIB
  • GaN
  • MOCVD
  • selective epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Lundin, W. V., Tsatsulnikov, A. F., Rodin, S. N., Sakharov, A. V., Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., & Evtikhiev, V. P. (2019). Selective Epitaxy of Submicron GaN Structures. Semiconductors, 53(16), 2118-2120. https://doi.org/10.1134/S1063782619120157