Selective electrochemical profiling of threading dislocations in mismatched InGaAs/GaAs heteroepitaxial systems

Á Nemcsics, F. Riesz, L. Dobos

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1 Citation (Scopus)

Abstract

The defect structure in relaxed (100) InGaAs/GaAs heteroepitaxial systems grown by molecular beam epitaxy is studied by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the dislocation density. The density of dislocations is inversely proportional to the layer thickness and increases with misfit. The results are compared to theoretical models.

Original languageEnglish
Pages (from-to)283-288
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume171
Issue number1
Publication statusPublished - 1999

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Defect structures
Molecular beam epitaxy
Etching
molecular beam epitaxy
etching
defects
profiles
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "The defect structure in relaxed (100) InGaAs/GaAs heteroepitaxial systems grown by molecular beam epitaxy is studied by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the dislocation density. The density of dislocations is inversely proportional to the layer thickness and increases with misfit. The results are compared to theoretical models.",
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AU - Nemcsics, Á

AU - Riesz, F.

AU - Dobos, L.

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N2 - The defect structure in relaxed (100) InGaAs/GaAs heteroepitaxial systems grown by molecular beam epitaxy is studied by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the dislocation density. The density of dislocations is inversely proportional to the layer thickness and increases with misfit. The results are compared to theoretical models.

AB - The defect structure in relaxed (100) InGaAs/GaAs heteroepitaxial systems grown by molecular beam epitaxy is studied by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the dislocation density. The density of dislocations is inversely proportional to the layer thickness and increases with misfit. The results are compared to theoretical models.

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