Selective detection of deep recombinative centers

Research output: Contribution to journalArticle

Abstract

A new DLTS method is proposed for selective detection of deep recombination centers. Using electrical excitation pulses in p-n junctions the recombination centers are detected in a single temperature scan independently of their position in the forbidden band. Using capacitance DLTS the time dependence of the recombination processes can be analyzed at a single appropriately chosen temperature. Advantages of selective injection of minority carriers can be exploited in the method.

Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalSolid-State Electronics
Volume29
Issue number9
DOIs
Publication statusPublished - 1986

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Deep level transient spectroscopy
forbidden bands
minority carriers
p-n junctions
time dependence
Capacitance
capacitance
injection
Temperature
temperature
pulses
excitation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Selective detection of deep recombinative centers. / Dózsa, L.

In: Solid-State Electronics, Vol. 29, No. 9, 1986, p. 861-863.

Research output: Contribution to journalArticle

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