Selective detection of deep recombinative centers

Research output: Contribution to journalArticle


A new DLTS method is proposed for selective detection of deep recombination centers. Using electrical excitation pulses in p-n junctions the recombination centers are detected in a single temperature scan independently of their position in the forbidden band. Using capacitance DLTS the time dependence of the recombination processes can be analyzed at a single appropriately chosen temperature. Advantages of selective injection of minority carriers can be exploited in the method.

Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalSolid State Electronics
Issue number9
Publication statusPublished - Sep 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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