Secondary ion mass spectrometry depth profiling and simultaneous electrical investigation of MOS structures

I. Bársony, D. Marton, J. Giber

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A comparative study of the electrical behaviour of MOS structures and the composition of the oxide layer was carried out by means of secondary ion mass spectrometry depth profiling and simultaneous electrical measurements. The width of the SiSiO2 interface region was determined for wet, dry and HCl oxide layers using a special method for definition of the virtual SiSiO2 interface of the depth profiles. A good correlation was found between the interface region width and the electrical parameters such as fixed oxide charge density and minimum surface state density for the samples analysed. The secondary ion intensity distributions of different contaminating species show a maximum at a distance of 20-80 Å from the interface. The incorporation of chlorine during HCl oxidation was monitored and a direct identification of migrating sodium ions in the HCl oxide layers was accomplished by comparing 23Na+ depth profiles before and after positive bias- temperature stress.

Original languageEnglish
Pages (from-to)275-285
Number of pages11
JournalThin Solid Films
Volume51
Issue number3
DOIs
Publication statusPublished - Jun 15 1978

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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