SCTS: Scanning capacitance transient spectroscopy

A. Tóth, L. Dózsa, J. Gyulai, F. Giannazzo, V. Raineri

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A new working mode of scanning capacitance microscopy (SCM) is presented, extending the possibilities of the measurement from lock-in amplitude mapping to recording of capacitance transients arising as response of abrupt bias changes. Effect of Au doping in Si on SCM and scanning capacitance transient spectroscopy (SCTS) was observed. The decay time of capacitance transient, measured locally on slightly doped region shows good agreement with the conventional DLTS results.

Original languageEnglish
Pages (from-to)89-91
Number of pages3
JournalMaterials Science in Semiconductor Processing
Volume4
Issue number1-3
DOIs
Publication statusPublished - Feb 6 2001

Fingerprint

Deep level transient spectroscopy
Capacitance
capacitance
Scanning
scanning
spectroscopy
Microscopic examination
microscopy
Doping (additives)
recording
decay

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

SCTS : Scanning capacitance transient spectroscopy. / Tóth, A.; Dózsa, L.; Gyulai, J.; Giannazzo, F.; Raineri, V.

In: Materials Science in Semiconductor Processing, Vol. 4, No. 1-3, 06.02.2001, p. 89-91.

Research output: Contribution to journalArticle

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