Sc3AlN - A new perovskite

Carina Höglund, Jens Birch, Manfred Beckers, Björn Alling, Zsolt Czigány, Arndt Mücklich, Lars Hultman

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Sc3AlN with perovskite structure has been synthesized as the first ternary phase in the Sc-Al-N system. Magnetron sputter epitaxy at 650°C was used to grow single-crystal, stoichiometric Sc3AlN(111) thin films onto MgO(111) substrates with ScN(111) seed layers as shown by elastic recoil detection analysis, X-ray diffraction, and transmission electron microscopy. The Sc3AlN phase has a lattice parameter of 4.40 Å, which is in good agreement with the theoretically predicted 4.42 Å. Comparisons of total formation energies show that Sc3AlN is thermodynamically stable with respect to all known binary compounds. Sc 3AlN(111) films of 1.75 μm thickness exhibit a nanoindentation hardness of 14.2 GPa, an elastic modulus of 249 GPa, and a room-temperature electrical resistivity of 41.2 μΩ cm.

Original languageEnglish
Pages (from-to)1193-1195
Number of pages3
JournalEuropean Journal of Inorganic Chemistry
Issue number8
DOIs
Publication statusPublished - Mar 1 2008

Keywords

  • Crystal growth
  • Density functional theory
  • Electron microscopy
  • Perovskite nitride phases
  • Thin films

ASJC Scopus subject areas

  • Inorganic Chemistry

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    Höglund, C., Birch, J., Beckers, M., Alling, B., Czigány, Z., Mücklich, A., & Hultman, L. (2008). Sc3AlN - A new perovskite. European Journal of Inorganic Chemistry, (8), 1193-1195. https://doi.org/10.1002/ejic.200701356