Schottky junctions on n-type InP for zero bias microwave detectors

Zs J. Horváth, V. Rakovics, B. Szentpáli, S. Püspöki

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Abstract

Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2 + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage (I-V) and capacitance-voltage measurements in the temperature range of 80-320 K. The I-V characteristics are evaluated for both thermionic emission (TE) and thermionic-field emission theory. It is shown that at low temperatures even the field emission dominates the current in a given bias range. The barrier heights obtained for TE from the I-V measurements are in the range of 0.38-0.49 eV with ideality factors of 1.08-1.24. It is concluded that the junctions can be used for zero bias detector purposes.

Original languageEnglish
Pages (from-to)916-921
Number of pages6
JournalPhysica Status Solidi C: Conferences
Issue number3
DOIs
Publication statusPublished - Dec 1 2003
Event6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary
Duration: May 26 2002May 29 2002

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ASJC Scopus subject areas

  • Condensed Matter Physics

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