Schottky junctions on n-type InP for zero bias microwave detectors

Z. Horváth, V. Rakovics, B. Szentpáli, S. Püspöki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2 + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage (I-V) and capacitance-voltage measurements in the temperature range of 80-320 K. The I-V characteristics are evaluated for both thermionic emission (TE) and thermionic-field emission theory. It is shown that at low temperatures even the field emission dominates the current in a given bias range. The barrier heights obtained for TE from the I-V measurements are in the range of 0.38-0.49 eV with ideality factors of 1.08-1.24. It is concluded that the junctions can be used for zero bias detector purposes.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages916-921
Number of pages6
Edition3
DOIs
Publication statusPublished - 2003
Event6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary
Duration: May 26 2002May 29 2002

Other

Other6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002
CountryHungary
CityBudapest
Period5/26/025/29/02

Fingerprint

Thermionic emission
thermionic emission
Microwaves
Detectors
microwaves
Field emission
field emission
detectors
Diodes
Capacitance measurement
Voltage measurement
Schottky diodes
surface treatment
electrical measurement
Surface treatment
capacitance
diodes
Temperature
Electric potential
electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Horváth, Z., Rakovics, V., Szentpáli, B., & Püspöki, S. (2003). Schottky junctions on n-type InP for zero bias microwave detectors. In Physica Status Solidi C: Conferences (3 ed., pp. 916-921) https://doi.org/10.1002/pssc.200306225

Schottky junctions on n-type InP for zero bias microwave detectors. / Horváth, Z.; Rakovics, V.; Szentpáli, B.; Püspöki, S.

Physica Status Solidi C: Conferences. 3. ed. 2003. p. 916-921.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horváth, Z, Rakovics, V, Szentpáli, B & Püspöki, S 2003, Schottky junctions on n-type InP for zero bias microwave detectors. in Physica Status Solidi C: Conferences. 3 edn, pp. 916-921, 6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002, Budapest, Hungary, 5/26/02. https://doi.org/10.1002/pssc.200306225
Horváth Z, Rakovics V, Szentpáli B, Püspöki S. Schottky junctions on n-type InP for zero bias microwave detectors. In Physica Status Solidi C: Conferences. 3 ed. 2003. p. 916-921 https://doi.org/10.1002/pssc.200306225
Horváth, Z. ; Rakovics, V. ; Szentpáli, B. ; Püspöki, S. / Schottky junctions on n-type InP for zero bias microwave detectors. Physica Status Solidi C: Conferences. 3. ed. 2003. pp. 916-921
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