Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2 + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage (I-V) and capacitance-voltage measurements in the temperature range of 80-320 K. The I-V characteristics are evaluated for both thermionic emission (TE) and thermionic-field emission theory. It is shown that at low temperatures even the field emission dominates the current in a given bias range. The barrier heights obtained for TE from the I-V measurements are in the range of 0.38-0.49 eV with ideality factors of 1.08-1.24. It is concluded that the junctions can be used for zero bias detector purposes.
|Number of pages||6|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - Dec 1 2003|
|Event||6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary|
Duration: May 26 2002 → May 29 2002
ASJC Scopus subject areas
- Condensed Matter Physics