We report an experimental investigation of Au Schottky contacts prepared on both n-type and p-type InP. In particular, we have investigated in great details the effects of InP surface treatment on the current-voltage behaviour of n-type junctions. This included cleaning with HF:H2O and HCl:H 2O solutions before metallization, investigatinging the effect of an air exposure and investigating the effect of the metal work function using Al and Sn metallizations as well. A best Schottky barrier height of 0.83 eV could be achieved using an HCl:H2O surface treatment.
ASJC Scopus subject areas
- Condensed Matter Physics