Schottky contacts to InP

Zs J. Horváth, E. Ayyildiz, V. Rakovics, H. Cetin, B. Põdör

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report an experimental investigation of Au Schottky contacts prepared on both n-type and p-type InP. In particular, we have investigated in great details the effects of InP surface treatment on the current-voltage behaviour of n-type junctions. This included cleaning with HF:H2O and HCl:H 2O solutions before metallization, investigatinging the effect of an air exposure and investigating the effect of the metal work function using Al and Sn metallizations as well. A best Schottky barrier height of 0.83 eV could be achieved using an HCl:H2O surface treatment.

Original languageEnglish
Pages (from-to)1423-1427
Number of pages5
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number4
DOIs
Publication statusPublished - Nov 7 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Horváth, Z. J., Ayyildiz, E., Rakovics, V., Cetin, H., & Põdör, B. (2005). Schottky contacts to InP. Physica Status Solidi C: Conferences, 2(4), 1423-1427. https://doi.org/10.1002/pssc.200460479