Scanning tunnelling microscopy on oxygen-sensitive Ga2O3 thin-film ceramics

Wolfgang Hanrieder, H. Meixner

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Scanning tunnelling microscopy (STM), which yields lateral and vertical resolution in the sub-nm range, was applied to thin films of stoichiometric, oxygen-sensitive Ga2O3. In a next step a combined STM and Auger electron spectroscopy study was performed for ultra-thin platinum metallizations of these Ga2O3 ceramic carriers. The drastically enhanced activity and its degradation at temperatures around 1000 K of this real supported catalyst with respect to CO oxidation rates is demonstrated by means of a quadrupole mass spectrometer in varying O2/CO atmospheres. For the first time STM images and images of the local barrier height of these ultra-thin Pt layers are shown before and after degradation of the catalytic activity. Special care has been taken to prepare tunnelling tips of extremely low curvature radii and of sufficiently high mechanical stability to enable realistic imaging of these rough surfaces to be performed. General guidelines for tip-shape preparation result from a finite-element simulation of d.c. etched tungsten tips.

Original languageEnglish
Pages (from-to)401-406
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume4
Issue number3-4
DOIs
Publication statusPublished - 1991

Fingerprint

Scanning tunneling microscopy
scanning tunneling microscopy
ceramics
Carbon Monoxide
Oxygen
Thin films
oxygen
thin films
degradation
Degradation
Tungsten
Mechanical stability
Mass spectrometers
Auger electron spectroscopy
Metallizing
Platinum
Catalyst supports
mass spectrometers
Auger spectroscopy
electron spectroscopy

ASJC Scopus subject areas

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Scanning tunnelling microscopy on oxygen-sensitive Ga2O3 thin-film ceramics. / Hanrieder, Wolfgang; Meixner, H.

In: Sensors and Actuators, B: Chemical, Vol. 4, No. 3-4, 1991, p. 401-406.

Research output: Contribution to journalArticle

@article{1a6304007f294425ac2e721107ccc7d9,
title = "Scanning tunnelling microscopy on oxygen-sensitive Ga2O3 thin-film ceramics",
abstract = "Scanning tunnelling microscopy (STM), which yields lateral and vertical resolution in the sub-nm range, was applied to thin films of stoichiometric, oxygen-sensitive Ga2O3. In a next step a combined STM and Auger electron spectroscopy study was performed for ultra-thin platinum metallizations of these Ga2O3 ceramic carriers. The drastically enhanced activity and its degradation at temperatures around 1000 K of this real supported catalyst with respect to CO oxidation rates is demonstrated by means of a quadrupole mass spectrometer in varying O2/CO atmospheres. For the first time STM images and images of the local barrier height of these ultra-thin Pt layers are shown before and after degradation of the catalytic activity. Special care has been taken to prepare tunnelling tips of extremely low curvature radii and of sufficiently high mechanical stability to enable realistic imaging of these rough surfaces to be performed. General guidelines for tip-shape preparation result from a finite-element simulation of d.c. etched tungsten tips.",
author = "Wolfgang Hanrieder and H. Meixner",
year = "1991",
doi = "10.1016/0925-4005(91)80142-7",
language = "English",
volume = "4",
pages = "401--406",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "3-4",

}

TY - JOUR

T1 - Scanning tunnelling microscopy on oxygen-sensitive Ga2O3 thin-film ceramics

AU - Hanrieder, Wolfgang

AU - Meixner, H.

PY - 1991

Y1 - 1991

N2 - Scanning tunnelling microscopy (STM), which yields lateral and vertical resolution in the sub-nm range, was applied to thin films of stoichiometric, oxygen-sensitive Ga2O3. In a next step a combined STM and Auger electron spectroscopy study was performed for ultra-thin platinum metallizations of these Ga2O3 ceramic carriers. The drastically enhanced activity and its degradation at temperatures around 1000 K of this real supported catalyst with respect to CO oxidation rates is demonstrated by means of a quadrupole mass spectrometer in varying O2/CO atmospheres. For the first time STM images and images of the local barrier height of these ultra-thin Pt layers are shown before and after degradation of the catalytic activity. Special care has been taken to prepare tunnelling tips of extremely low curvature radii and of sufficiently high mechanical stability to enable realistic imaging of these rough surfaces to be performed. General guidelines for tip-shape preparation result from a finite-element simulation of d.c. etched tungsten tips.

AB - Scanning tunnelling microscopy (STM), which yields lateral and vertical resolution in the sub-nm range, was applied to thin films of stoichiometric, oxygen-sensitive Ga2O3. In a next step a combined STM and Auger electron spectroscopy study was performed for ultra-thin platinum metallizations of these Ga2O3 ceramic carriers. The drastically enhanced activity and its degradation at temperatures around 1000 K of this real supported catalyst with respect to CO oxidation rates is demonstrated by means of a quadrupole mass spectrometer in varying O2/CO atmospheres. For the first time STM images and images of the local barrier height of these ultra-thin Pt layers are shown before and after degradation of the catalytic activity. Special care has been taken to prepare tunnelling tips of extremely low curvature radii and of sufficiently high mechanical stability to enable realistic imaging of these rough surfaces to be performed. General guidelines for tip-shape preparation result from a finite-element simulation of d.c. etched tungsten tips.

UR - http://www.scopus.com/inward/record.url?scp=0026172921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026172921&partnerID=8YFLogxK

U2 - 10.1016/0925-4005(91)80142-7

DO - 10.1016/0925-4005(91)80142-7

M3 - Article

VL - 4

SP - 401

EP - 406

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 3-4

ER -