Scanning infrared microscopy study of annealing behavior of interfacial micro-voids in direct bonded silicon

N. Q. Khánh, A. Hámori, I. Bársony, C. Dücső, M. Fried

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The density of micro-voids with dimensions from several to a few tens μm at the interface of bonded silicon wafers formed during annealing at different temperatures was investigated by using a submicron resolution Scanning Infrared Microscope (SIRM). For low temperature heat treatment (400°C) the density and size (i.e. area) of micro-voids have been found to be much larger in the case of bonding with hydrophilic wafers than for the hydrophobic one. By increasing the amnealing temperature up to 1150°C, the density and size of micro-voids decreased in both cases, but more significantly for hydrophobic wafer bonding. The cause of the different annealing behaviour of micro-voids between hydrophilic and hydrophobic samples is believed to be the native oxide forming only on the surface of the hydrophilic wafers during storage and surface treatment.

Original languageEnglish
Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages145-148
Number of pages4
ISBN (Print)286332182X, 9782863321829
Publication statusPublished - 1995
Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
Duration: Sep 25 1995Sep 27 1995

Other

Other25th European Solid State Device Research Conference, ESSDERC 1995
CountryNetherlands
CityThe Hague
Period9/25/959/27/95

Fingerprint

Microscopic examination
Annealing
Low temperature operations
Infrared radiation
Scanning
Wafer bonding
Silicon
Silicon wafers
Surface treatment
Microscopes
Temperature
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Khánh, N. Q., Hámori, A., Bársony, I., Dücső, C., & Fried, M. (1995). Scanning infrared microscopy study of annealing behavior of interfacial micro-voids in direct bonded silicon. In ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference (pp. 145-148). [5435985] IEEE Computer Society.

Scanning infrared microscopy study of annealing behavior of interfacial micro-voids in direct bonded silicon. / Khánh, N. Q.; Hámori, A.; Bársony, I.; Dücső, C.; Fried, M.

ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. IEEE Computer Society, 1995. p. 145-148 5435985.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Khánh, NQ, Hámori, A, Bársony, I, Dücső, C & Fried, M 1995, Scanning infrared microscopy study of annealing behavior of interfacial micro-voids in direct bonded silicon. in ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference., 5435985, IEEE Computer Society, pp. 145-148, 25th European Solid State Device Research Conference, ESSDERC 1995, The Hague, Netherlands, 9/25/95.
Khánh NQ, Hámori A, Bársony I, Dücső C, Fried M. Scanning infrared microscopy study of annealing behavior of interfacial micro-voids in direct bonded silicon. In ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. IEEE Computer Society. 1995. p. 145-148. 5435985
Khánh, N. Q. ; Hámori, A. ; Bársony, I. ; Dücső, C. ; Fried, M. / Scanning infrared microscopy study of annealing behavior of interfacial micro-voids in direct bonded silicon. ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. IEEE Computer Society, 1995. pp. 145-148
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