Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs

C. P. Moca, B. L. Sheu, N. Samarth, P. Schiffer, B. Janko, G. Zaránd

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

Original languageEnglish
Article number137203
JournalPhysical Review Letters
Volume102
Issue number13
DOIs
Publication statusPublished - Mar 30 2009

Fingerprint

scaling
electrical resistivity
insulators
magnetic fields
metals
interactions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs. / Moca, C. P.; Sheu, B. L.; Samarth, N.; Schiffer, P.; Janko, B.; Zaránd, G.

In: Physical Review Letters, Vol. 102, No. 13, 137203, 30.03.2009.

Research output: Contribution to journalArticle

Moca, C. P. ; Sheu, B. L. ; Samarth, N. ; Schiffer, P. ; Janko, B. ; Zaránd, G. / Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs. In: Physical Review Letters. 2009 ; Vol. 102, No. 13.
@article{1290210238c342f0b62d7a1808b89ee9,
title = "Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs",
abstract = "We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.",
author = "Moca, {C. P.} and Sheu, {B. L.} and N. Samarth and P. Schiffer and B. Janko and G. Zar{\'a}nd",
year = "2009",
month = "3",
day = "30",
doi = "10.1103/PhysRevLett.102.137203",
language = "English",
volume = "102",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "13",

}

TY - JOUR

T1 - Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs

AU - Moca, C. P.

AU - Sheu, B. L.

AU - Samarth, N.

AU - Schiffer, P.

AU - Janko, B.

AU - Zaránd, G.

PY - 2009/3/30

Y1 - 2009/3/30

N2 - We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

AB - We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

UR - http://www.scopus.com/inward/record.url?scp=64649084467&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64649084467&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.102.137203

DO - 10.1103/PhysRevLett.102.137203

M3 - Article

VL - 102

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 13

M1 - 137203

ER -