Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs

C. P. Moca, B. L. Sheu, N. Samarth, P. Schiffer, B. Janko, G. Zarand

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Abstract

We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

Original languageEnglish
Article number137203
JournalPhysical review letters
Volume102
Issue number13
DOIs
Publication statusPublished - Mar 30 2009

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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