Rotational aftereffect of single domain particles

Martha Pardavi-Horvath, Gabor Vertesy, Antonio Hernando

Research output: Contribution to journalConference article


The time sequence of individual switching events was measured between 50°C and 88°C in an applied field H*, on a two dimensional square array of single domain garnet particles, switching by rotation against anisotropy energy barriers. The system is stable against thermal excitation because there are no low energy domain wall (DW) processes present, and no thermal aftereffect takes place at room temperature. However, at elevated temperatures the anisotropy barriers are decreased, and thermal relaxation by rotation was observed. In the regime of rotational switching the thermal relaxation process depends very weakly on the magnetic field. The aftereffect can be described by n(t) = n o(1 - exp(-t/τ). At T = 50°C, τ = (77 ± 7)s, decreasing to (24 ± 4)s at 88 C. As expected, at a given temperature τ is practically independent of H*, demonstrating that, in contrast to aftereffect in materials involving DW motion, the aftereffect in two dimensional arrays, switching by rotation, is not sensitive to the applied field.

Original languageEnglish
Pages (from-to)2064-2066
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number4 I
Publication statusPublished - Jul 1 2001
Event8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States
Duration: Jan 7 2001Jan 11 2001


  • Magnetic aftereffect
  • Magnetization process
  • Magnetization switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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