Room temperature transformations induced in SiO2 layers by chemical compounds: I

A. Barna, M. Németh-Sallay, I. C. Szép, P. I. Didenko, V. G. Litovchenko, P. I. Marchenko, G. F. Romanova

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Transformations in the structure and the composition of SiO2 films as a result of the action of some organic compounds at room temperature were studied by various methods. Secondary ion mass spectrometry (SIMS) showed that hydrogen-containing species were removed from the SiO2 layers (which were prepared by the thermal oxidation of silicon wafers) after a prolonged exposure to diethyl ether vapour. Electron microscopy and electron diffraction studies showed that the exposure led to the development of a crystalline phase in the SiO2 layer. SIMS and transmission electron microscopy measurements both supported the view that the transformation from an amorphous structure to a denser more crystalline phase took place as a result of an interaction between molecules of diethyl ether and the SiO2 surface. The removal of hydrogen-containing species seems to be a condition for this kind of transformation. In a recent short note1 we have presented some preliminary results concerning amorphous-to-crystalline phase transformations in SiO2 films which were prepared by the thermal oxidation of silicon wafers and which were treated at room temperature with various (mainly organic) compounds. Electron microscopy and electron diffraction studies clearly revealed the presence of a crystalline phase. Of the compounds investigated diethyl ether seemed to be the most active in inducing this type of transformation. In the following, more results will be given of investigations performed with the aim of understanding the phenomena and an explanation of the transformation mechanism will be offered.

Original languageEnglish
Pages (from-to)355-360
Number of pages6
JournalThin Solid Films
Volume55
Issue number3
DOIs
Publication statusPublished - Dec 15 1978

Fingerprint

chemical compounds
Chemical compounds
diethyl ether
Ether
Crystalline materials
Ethers
room temperature
Secondary ion mass spectrometry
Silicon wafers
Organic compounds
Electron diffraction
Electron microscopy
Hydrogen
organic compounds
secondary ion mass spectrometry
electron microscopy
Oxidation
Temperature
electron diffraction
wafers

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Barna, A., Németh-Sallay, M., Szép, I. C., Didenko, P. I., Litovchenko, V. G., Marchenko, P. I., & Romanova, G. F. (1978). Room temperature transformations induced in SiO2 layers by chemical compounds: I. Thin Solid Films, 55(3), 355-360. https://doi.org/10.1016/0040-6090(78)90152-9

Room temperature transformations induced in SiO2 layers by chemical compounds : I. / Barna, A.; Németh-Sallay, M.; Szép, I. C.; Didenko, P. I.; Litovchenko, V. G.; Marchenko, P. I.; Romanova, G. F.

In: Thin Solid Films, Vol. 55, No. 3, 15.12.1978, p. 355-360.

Research output: Contribution to journalArticle

Barna, A, Németh-Sallay, M, Szép, IC, Didenko, PI, Litovchenko, VG, Marchenko, PI & Romanova, GF 1978, 'Room temperature transformations induced in SiO2 layers by chemical compounds: I', Thin Solid Films, vol. 55, no. 3, pp. 355-360. https://doi.org/10.1016/0040-6090(78)90152-9
Barna A, Németh-Sallay M, Szép IC, Didenko PI, Litovchenko VG, Marchenko PI et al. Room temperature transformations induced in SiO2 layers by chemical compounds: I. Thin Solid Films. 1978 Dec 15;55(3):355-360. https://doi.org/10.1016/0040-6090(78)90152-9
Barna, A. ; Németh-Sallay, M. ; Szép, I. C. ; Didenko, P. I. ; Litovchenko, V. G. ; Marchenko, P. I. ; Romanova, G. F. / Room temperature transformations induced in SiO2 layers by chemical compounds : I. In: Thin Solid Films. 1978 ; Vol. 55, No. 3. pp. 355-360.
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