Room temperature persistent photoconductivity in GaP:S

G. E. Zardas, D. E. Theodorou, P. C. Euthymiou, Ch I. Symeonides, F. Riesz, B. Szentpall

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10 Citations (Scopus)

Abstract

The build-up and the decay of persistent photoconductivity (PP) have been measured at room temperature in GaP. The PP effect in our samples is attributed to the existence of defect clusters in the bulk material. Irradiation of the samples with α-particles generates defect clusters and enhances further the PP effect. Persistent photoconductivity at room temperature may have technical applications i.e. photon dose meters and image storage.

Original languageEnglish
Pages (from-to)77-79
Number of pages3
JournalSolid State Communications
Volume105
Issue number2
DOIs
Publication statusPublished - Jan 1998

Keywords

  • A. Semiconductors
  • D. Photoconductivity
  • D. Recombination and trapping
  • E. Photoelectron spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Zardas, G. E., Theodorou, D. E., Euthymiou, P. C., Symeonides, C. I., Riesz, F., & Szentpall, B. (1998). Room temperature persistent photoconductivity in GaP:S. Solid State Communications, 105(2), 77-79. https://doi.org/10.1016/S0038-1098(97)10065-5