Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE

J. Novák, S. Hasenöhrl, I. Vávra, K. Sedlácková, M. Kucera, G. Radnóczi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we report on a study of the spinodal-like decomposition of InxGa1-xP grown on (1 0 0) GaP substrates at 740 °C by metalorganic vapor phase epitaxy (MOVPE). We concentrated our efforts on an alloy with the InP mole fraction close to x=0.27, at which the indirect-to-direct band-gap structure crossover occurs. We used the V/III ratio and growth rate for the limitation of diffusion length of adatoms before their incorporation into an epitaxial layer. Transmission electron microscopy (TEM) together with energy dispersive X-ray analysis (EDX) and low-temperature photoluminescence were used to demonstrate that a spinodal-like decomposition of such InGaP layers can partially be suppressed if the V/III ratio is increased from a starting value of 75-350. Next improvement in the quality of the epitaxial layer may be achieved by an increase of the growth rate vg up to value higher as 1.1 μm/h.

Original languageEnglish
Pages (from-to)76-80
Number of pages5
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - Jan 2007

Fingerprint

Metallorganic vapor phase epitaxy
Epitaxial layers
vapor phase epitaxy
Decomposition
decomposition
Adatoms
Energy dispersive X ray analysis
Photoluminescence
Energy gap
diffusion length
Transmission electron microscopy
adatoms
crossovers
Substrates
photoluminescence
transmission electron microscopy
Temperature
x rays
energy

Keywords

  • A1. Solid solutions
  • A1. Spinodal decomposition
  • A3. Metalorganic vapor phase epitaxy
  • B3. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE. / Novák, J.; Hasenöhrl, S.; Vávra, I.; Sedlácková, K.; Kucera, M.; Radnóczi, G.

In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.2007, p. 76-80.

Research output: Contribution to journalArticle

Novák, J. ; Hasenöhrl, S. ; Vávra, I. ; Sedlácková, K. ; Kucera, M. ; Radnóczi, G. / Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE. In: Journal of Crystal Growth. 2007 ; Vol. 298, No. SPEC. ISS. pp. 76-80.
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