Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE

J. Novák, S. Hasenöhrl, I. Vávra, K. Sedlácková, M. Kucera, G. Radnóczi

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2 Citations (Scopus)

Abstract

In this paper, we report on a study of the spinodal-like decomposition of InxGa1-xP grown on (1 0 0) GaP substrates at 740 °C by metalorganic vapor phase epitaxy (MOVPE). We concentrated our efforts on an alloy with the InP mole fraction close to x=0.27, at which the indirect-to-direct band-gap structure crossover occurs. We used the V/III ratio and growth rate for the limitation of diffusion length of adatoms before their incorporation into an epitaxial layer. Transmission electron microscopy (TEM) together with energy dispersive X-ray analysis (EDX) and low-temperature photoluminescence were used to demonstrate that a spinodal-like decomposition of such InGaP layers can partially be suppressed if the V/III ratio is increased from a starting value of 75-350. Next improvement in the quality of the epitaxial layer may be achieved by an increase of the growth rate vg up to value higher as 1.1 μm/h.

Original languageEnglish
Pages (from-to)76-80
Number of pages5
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - Jan 1 2007

Keywords

  • A1. Solid solutions
  • A1. Spinodal decomposition
  • A3. Metalorganic vapor phase epitaxy
  • B3. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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