Al films were prepared by vacuum evaporation on air cleaved (100) surfaces of NaCl crystals at 523 K and 5 × 10-5 Pa. The deposition rate was 0.5 nm/s. For studying the role of the NaCl surfaces defects the substrates were predeposited with a thin (2 nm thick) SiOx film. The SiOx nucleated and developed islands preferentially at the surface defects (e.g. steps, vacancies, etc) producing the same decoration pattern as that developing under Au deposition. The Al films of various thicknesses were stabilized by an a-C layer and floated off in distilled water. They were studied by TEM and SAD, while their surface topography was observed by Pt-C replica technique. The Al films grown on a pure NaCl (100) surface showed a <111> orientation in the thickness range of 2-300 nm. By depositing the Al on the NaCl surface precovered and decorated by SiOx the (100) orientation dominated in the whole thickness range. The results clearly prove that the orientation of the final grown films is determined mainly by the nucleation while the coalescence plays a secondary role.
|Number of pages||1|
|Publication status||Published - Jan 1 1990|
|Event||Selected Proceedings of the Yugoslav-Austrian-Hungarian Fourth Joint Vacuum Conference - Portoroz, Yugosl|
Duration: Sep 20 1988 → Sep 23 1988
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films