Role of nucleation and coalescence in the oriented growth of Al films deposited on the cleaved (100) surfaces of NaCl crystals

M. El-Hiti, P. B. Barna, F. M. Reicha

Research output: Contribution to journalConference article

Abstract

Al films were prepared by vacuum evaporation on air cleaved (100) surfaces of NaCl crystals at 523 K and 5 × 10-5 Pa. The deposition rate was 0.5 nm/s. For studying the role of the NaCl surfaces defects the substrates were predeposited with a thin (2 nm thick) SiOx film. The SiOx nucleated and developed islands preferentially at the surface defects (e.g. steps, vacancies, etc) producing the same decoration pattern as that developing under Au deposition. The Al films of various thicknesses were stabilized by an a-C layer and floated off in distilled water. They were studied by TEM and SAD, while their surface topography was observed by Pt-C replica technique. The Al films grown on a pure NaCl (100) surface showed a <111> orientation in the thickness range of 2-300 nm. By depositing the Al on the NaCl surface precovered and decorated by SiOx the (100) orientation dominated in the whole thickness range. The results clearly prove that the orientation of the final grown films is determined mainly by the nucleation while the coalescence plays a secondary role.

Original languageEnglish
Number of pages1
JournalVacuum
Volume40
Issue number1-2
Publication statusPublished - Jan 1 1990
EventSelected Proceedings of the Yugoslav-Austrian-Hungarian Fourth Joint Vacuum Conference - Portoroz, Yugosl
Duration: Sep 20 1988Sep 23 1988

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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