RF plasma modification of heavily destroyed ion implanted subsurface silicon layers

V. S. Lysenko, A. N. Nazarov, I. M. Zaritskii, G. Serfözö, G. Battistig, J. Gyulai, L. Dózsa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A rf plasma treatment of implanted SiO2/Si structures leads to significantly different results in the case of partly amorphised and fully amorphised silicon layers. In the case of partly amorphised layer crystallization, ordering of amorphous clusters and rise in electrical activity of implants is observed, while a suppression of broken bond concentration, and no regrowth of crystalline structure is determined for fully a morphised layers.

Original languageEnglish
Pages (from-to)75-80
Number of pages6
Journalphysica status solidi (a)
Volume115
Issue number1
DOIs
Publication statusPublished - Sep 16 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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