A repetitive mode pulsed ion beam apparatus was built using the principle of magnetically insulated vacuum diode driven by a Marx bank. The energy of the individual pulses of 100-300 ns duration at 250 keV maximum voltage is at present below the melting threshold of silicon. Higher doping concentrations were achieved with up to 4000 pulses. We demonstrate the operation by presenting boron and cesium profiles. Good quality metastable TiSi was formed when irradiating Ti layers on silicon with ions from a BN source.
ASJC Scopus subject areas
- Nuclear and High Energy Physics