Repetitive mode pulsed ion implanter with magnetically insulated diode

I. Krafcsik, L. Kiralyhidi, P. Riedl, M. Fried, J. Gyulai, F. Pavlyak

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A repetitive mode pulsed ion beam apparatus was built using the principle of magnetically insulated vacuum diode driven by a Marx bank. The energy of the individual pulses of 100-300 ns duration at 250 keV maximum voltage is at present below the melting threshold of silicon. Higher doping concentrations were achieved with up to 4000 pulses. We demonstrate the operation by presenting boron and cesium profiles. Good quality metastable TiSi was formed when irradiating Ti layers on silicon with ions from a BN source.

Original languageEnglish
Pages (from-to)604-607
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume21
Issue number1-4
DOIs
Publication statusPublished - 1987

Fingerprint

Silicon
Diodes
diodes
Ions
Cesium
Boron
silicon
pulses
cesium
Ion beams
ions
boron
Melting
ion beams
Doping (additives)
melting
Vacuum
vacuum
thresholds
Electric potential

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Repetitive mode pulsed ion implanter with magnetically insulated diode. / Krafcsik, I.; Kiralyhidi, L.; Riedl, P.; Fried, M.; Gyulai, J.; Pavlyak, F.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 21, No. 1-4, 1987, p. 604-607.

Research output: Contribution to journalArticle

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AU - Pavlyak, F.

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