Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

M. A. Di Forte-Poisson, F. Huet, A. Romann, M. Tordjman, D. Lancefield, E. Pereira, J. Di Persio, B. Pecz

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22 Citations (Scopus)

Abstract

This paper reports on the structural, optical and electrical properties of LP-MOCVD GaN grown on miscut and exactly oriented sapphire substrates as a function of gas purification. SIMS and C-V experiments achieved on GaN layers indicate that high purity NH3 is a significant source of oxygen contamination. Transport studies performed on oxygen-contaminated GaN samples have shown that oxygen acts as a very shallow donor. An activation energy ranging from 4 to 10 meV is extracted as a function of oxygen concentration. Hall mobilities of unintentionally oxygen-doped GaN samples are comparable to the data already published in the literature for silicon doped samples over carrier density range: 5 × 1017-3 × 1019 cm-3 [S. Nakamura et al., Jpn. J. Appl. Phys. 31 (1992) 2283]. Structural and optical GaN properties are not degraded by oxygen-contamination. [0 0 2] X-ray rocking curve (ω-scans) widths around 26-80 arcsec are obtained and a strong correlation is observed between low broad band yellow emission and highly oxygen-contaminated GaN samples.

Original languageEnglish
Pages (from-to)314-318
Number of pages5
JournalJournal of Crystal Growth
Volume195
Issue number1-4
DOIs
Publication statusPublished - Dec 15 1998

Keywords

  • Characterization
  • Defects
  • Growth
  • III-V nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Di Forte-Poisson, M. A., Huet, F., Romann, A., Tordjman, M., Lancefield, D., Pereira, E., Di Persio, J., & Pecz, B. (1998). Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 195(1-4), 314-318. https://doi.org/10.1016/S0022-0248(98)00584-3