Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

M. A. Di Forte-Poisson, F. Huet, A. Romann, M. Tordjman, D. Lancefield, E. Pereira, J. Di Persio, B. Pécz

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

This paper reports on the structural, optical and electrical properties of LP-MOCVD GaN grown on miscut and exactly oriented sapphire substrates as a function of gas purification. SIMS and C-V experiments achieved on GaN layers indicate that high purity NH3 is a significant source of oxygen contamination. Transport studies performed on oxygen-contaminated GaN samples have shown that oxygen acts as a very shallow donor. An activation energy ranging from 4 to 10 meV is extracted as a function of oxygen concentration. Hall mobilities of unintentionally oxygen-doped GaN samples are comparable to the data already published in the literature for silicon doped samples over carrier density range: 5 × 1017-3 × 1019 cm-3 [S. Nakamura et al., Jpn. J. Appl. Phys. 31 (1992) 2283]. Structural and optical GaN properties are not degraded by oxygen-contamination. [0 0 2] X-ray rocking curve (ω-scans) widths around 26-80 arcsec are obtained and a strong correlation is observed between low broad band yellow emission and highly oxygen-contaminated GaN samples.

Original languageEnglish
Pages (from-to)314-318
Number of pages5
JournalJournal of Crystal Growth
Volume195
Issue number1-4
Publication statusPublished - Dec 15 1998

Fingerprint

Gas fuel purification
Metallorganic vapor phase epitaxy
purification
vapor phase epitaxy
Physical properties
physical properties
Oxygen
oxygen
gases
contamination
Contamination
Optical properties
optical properties
Hall mobility
Aluminum Oxide
Metallorganic chemical vapor deposition
Silicon
Secondary ion mass spectrometry
Sapphire
secondary ion mass spectrometry

Keywords

  • Characterization
  • Defects
  • Growth
  • III-V nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Di Forte-Poisson, M. A., Huet, F., Romann, A., Tordjman, M., Lancefield, D., Pereira, E., ... Pécz, B. (1998). Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 195(1-4), 314-318.

Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy. / Di Forte-Poisson, M. A.; Huet, F.; Romann, A.; Tordjman, M.; Lancefield, D.; Pereira, E.; Di Persio, J.; Pécz, B.

In: Journal of Crystal Growth, Vol. 195, No. 1-4, 15.12.1998, p. 314-318.

Research output: Contribution to journalArticle

Di Forte-Poisson, MA, Huet, F, Romann, A, Tordjman, M, Lancefield, D, Pereira, E, Di Persio, J & Pécz, B 1998, 'Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy', Journal of Crystal Growth, vol. 195, no. 1-4, pp. 314-318.
Di Forte-Poisson MA, Huet F, Romann A, Tordjman M, Lancefield D, Pereira E et al. Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 1998 Dec 15;195(1-4):314-318.
Di Forte-Poisson, M. A. ; Huet, F. ; Romann, A. ; Tordjman, M. ; Lancefield, D. ; Pereira, E. ; Di Persio, J. ; Pécz, B. / Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy. In: Journal of Crystal Growth. 1998 ; Vol. 195, No. 1-4. pp. 314-318.
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